가격 및 재고
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Newark | SUM85N15-19-E3 | 835 | 1 | Cut Tape | ||||||||
| DigiKey | SUM85N15-19-E3CT-ND | 648 | 1 | Cut Tape | ||||||||
| TTI | SUM85N15-19-E3 | 800 | 800 | Tape & Reel | 10h | |||||||
| TME | SUM85N15-19-E3 | 0 | 800 | 5h | ||||||||
| Future Electronics | SUM85N15-19-E3 | 0 | 800 | Tape & Reel |
관련 부품
InfineonIRF3315SPBF
MOSFET, Power;N-Ch;VDSS 150V;RDS(ON) 0.082Ohm;ID 21A;D2Pak;PD 94W;VGS +/-20V;-55
InfineonAUIRF3315S
MOSFET, N-CH, 150V, 21A, D2PAK; Transistor Polarity:N Channel; Continuous Drain
설명
유통업체에서 제공한 Vishay SUM85N15-19-E3에 대한 설명입니다.
Trans MOSFET N-CH 150V 85A Automotive 3-Pin(2+Tab) D2PAK / MOSFET N-CH 150V 85A D2PAK
Single N-Channel 150 V 0.019 Ohms Surface Mount Power Mosfet - TO-263-3
N-CHANNEL 150-V (D-S) 175 DEGREE CENTIGRADE MOSFET Power Field-Effect Transistor, 85A I(D), 150V, 0.019ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
MOSFET, N, REEL 800; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:150V; Current, Id Cont:85A; Resistance, Rds On:0.019ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:4V; Case Style:D2-PAK; Termination Type:SMD; Alternate Case Style:D2-PAK; Current, Idm Pulse:180A; Max Repetitive Avalanche Energy:125mJ; Power Dissipation:375W; Power Dissipation on 1 Sq. PCB:3.75W; Power, Pd:375W; Quantity, Reel:800; Temperature, Tj Max:175°C; Temperature, Tj Min:-55°C; Time, trr Typ:130ns; Typ Capacitance Ciss:4750pF; Voltage, Vds Max:150V; Voltage, Vgs th Max:4V; Voltage, Vgs th Min:2V; Width, Tape:24mm
제조업체 별칭
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기술 사양
Physical
Case/PackageD2PAK
MountSurface Mount
Number of Pins3
Number of Terminals2
Weight1.437803 g
Technical
Continuous Drain Current (ID)85 A
Current85 A
Drain to Source Breakdown Voltage150 V
Drain to Source Resistance19 mΩ
Drain to Source Voltage (Vdss)150 V
Dual Supply Voltage150 V
Element ConfigurationSingle
Fall Time170 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance4.75 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation375 W
Min Breakdown Voltage150 V
Min Operating Temperature-55 °C
Nominal Vgs2 V
Number of Channels1
Number of Elements1
Power Dissipation3.75 W
Rds On Max19 mΩ
Resistance19 mΩ
Reverse Recovery Time130 ns
Rise Time170 ns
Schedule B8541290080
TerminationSMD/SMT
Threshold Voltage2 V
Turn-Off Delay Time40 ns
Turn-On Delay Time22 ns
Voltage150 V
Dimensions
Height4.826 mm
Length10.41 mm
Width9.65 mm
규정 준수
환경 분류
China RoHSNon-Compliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant
규정 준수 정책