공급망
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2008-07-29
Lifecycle StatusObsolete (Last Updated: 5 months ago)
설명
유통업체에서 제공한 Infineon IPA90R1K2C3XKSA2에 대한 설명입니다.
Power Transistor MOSFET N-Channel Enhancement 900V 5.1A 3-Pin TO-220FP
Trans MOSFET N-CH 900V 5.1A Automotive 3-Pin(3+Tab) TO-220FP Tube
Power Field-Effect Transistor, 3.1A I(D), 900V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
MOSFET, N, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:5.1A; Drain Source Voltage Vds:900V; On Resistance Rds(on):1.2ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:31W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-220; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Id Max:5.1A; Package / Case:TO-220; Power Dissipation Pd:31W; Termination Type:Through Hole; Transistor Type:Power MOSFET; Voltage Vds Typ:900V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V
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기술 사양
Physical
Case/PackageTO-220-3
Contact PlatingTin
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)3.1 A
Drain to Source Breakdown Voltage900 V
Drain to Source Resistance1.2 Ω
Drain to Source Voltage (Vdss)900 V
Dual Supply Voltage900 V
Element ConfigurationSingle
Fall Time40 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance710 pF
Max Operating Temperature150 °C
Max Power Dissipation31 W
Min Breakdown Voltage900 V
Min Operating Temperature-55 °C
Nominal Vgs3 V
Number of Elements1
Power Dissipation31 W
Rds On Max1.2 Ω
Rise Time20 ns
TerminationThrough Hole
Turn-Off Delay Time400 ns
Turn-On Delay Time70 ns
Dimensions
Height16.15 mm
Length10.65 mm
Width4.85 mm
규정 준수
환경 분류
China RoHSCompliant
Halogen FreeHalogen Free
Lead FreeLead Free
REACH SVHCYes
RoHSCompliant
규정 준수 정책