공급망
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2008-07-29
Lifecycle StatusObsolete (Last Updated: 5 months ago)
LTB Date2020-09-30
LTD Date2021-03-31
설명
유통업체에서 제공한 Infineon IPP90R1K0C3에 대한 설명입니다.
Trans MOSFET N-CH 900V 5.7A 3-Pin TO-220 Tube
Power Field-Effect Transistor, 5.7A I(D), 900V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN
MOSFET, N, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:5.7A; Drain Source Voltage Vds:900V; On Resistance Rds(on):1ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:89W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-220; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Id Max:5.7A; Package / Case:TO-220; Power Dissipation Pd:89W; Termination Type:Through Hole; Transistor Type:Power MOSFET; Voltage Vds Typ:900V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V
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- Infineon Technologies
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기술 사양
Physical
Case/PackageTO-220-3
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)5.7 A
Drain to Source Breakdown Voltage900 V
Drain to Source Resistance1 Ω
Drain to Source Voltage (Vdss)900 V
Dual Supply Voltage900 V
Element ConfigurationSingle
Fall Time35 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance850 pF
Max Operating Temperature175 °C
Max Power Dissipation89 W
Min Breakdown Voltage900 V
Min Operating Temperature-55 °C
Nominal Vgs3 V
Number of Elements1
Power Dissipation89 W
Rds On Max1 Ω
Rise Time20 ns
TerminationThrough Hole
Turn-Off Delay Time400 ns
Turn-On Delay Time70 ns
규정 준수
환경 분류
China RoHSCompliant
Halogen FreeHalogen Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
규정 준수 정책