공급망
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2014-07-12
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)
관련 부품
VishaySIHF7N60E-E3
VISHAY SIHF7N60E-E3 MOSFET Transistor, N Channel, 7 A, 600 V, 0.5 ohm, 10 V, 2 V
STMicroelectronicsSTF10N60M2
N-channel 600 V, 0.55 Ohm typ., 7.5 A MDmesh M2 Power MOSFET in TO-220FP package
설명
유통업체에서 제공한 onsemi FCPF850N80Z에 대한 설명입니다.
N-Channel Power MOSFET, SUPERFET® II, 800 V, 6 A, 850 mΩ, TO-220F
MOSFET N-CH 800V 6A TO220F / Trans MOSFET N-CH 800V 6A 3-Pin(3+Tab) TO-220FP Tube
Power Field-Effect Transistor, 6A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. In addition, internal gate-source ESD diode allows to withstand over 2kV HBM surge stress.Consequently, SuperFET II MOSFET is very suitable for the switching power applications such as Audio, Laptop adapter, Lighting, ATX power and industrial power applications.
제조업체 별칭
onsemi에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. onsemi는 다음 이름으로도 알려져 있습니다:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
기술 사양
Physical
Case/PackageTO-220-3
MountThrough Hole
Number of Pins3
Weight2.27 g
Technical
Continuous Drain Current (ID)6 A
Drain to Source Breakdown Voltage800 V
Drain to Source Resistance710 mΩ
Drain to Source Voltage (Vdss)800 V
Element ConfigurationSingle
Fall Time4.5 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance1.315 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation28.4 W
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Power Dissipation28.4 W
Rds On Max850 mΩ
Rise Time10 ns
Turn-Off Delay Time40 ns
Turn-On Delay Time16 ns
Dimensions
Height19.5 mm
Length10.36 mm
Width4.9 mm