공급망
Country of OriginGermany, Mainland China, Malaysia
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2010-05-06
Lifecycle StatusNRND (Last Updated: 4 weeks ago)
관련 부품
InfineonIPP60R190E6XKSA1
MOSFET N-CH 600V 20.2A TO220 / Trans MOSFET N-CH 650V 20.2A Automotive 3-Pin(3+Tab) TO-220 Tube
InfineonIPP60R190C6XKSA1
MOSFET N-CH 600V 20.2A TO220 / Trans MOSFET N-CH 650V 20.2A Automotive 3-Pin(3+Tab) TO-220 Tube
onsemiFCPF190N60E
N-Channel Power MOSFET, SUPERFET® II, Easy Drive, 600 V, 20.6 A, 190 mΩ, TO-220F
VishaySIHP23N60E-GE3
227W(Tc) 30V 4V@ 250¦ÌA 95nC@ 10V 1N 600V 158m¦¸@ 12A,10V 23A 2.418nF@100V TO-220 9.01mm
STMicroelectronicsSTP28N60M2
N-channel 600 V, 0.135 Ohm typ., 22 A MDmesh M2 Power MOSFETs in TO-220 package
설명
유통업체에서 제공한 Infineon IPA60R190E6XKSA1에 대한 설명입니다.
Trans MOSFET N-CH 650V 20.2A Automotive 3-Pin(3+Tab) TO-220FP Tube
Power MOSFET, N Channel, 650 V, 20.2 A, 0.17 ohm, TO-220, Through Hole
Transistor MOSFET N-CH 650V 22.2A 3-Pin TO-220
CoolMOS™ E6 combines Infineon's experience as the leading superjunction MOSFET supplier with best-in-class innovation, PG-TO220-3, RoHS
Infineon SCT
Mosfet, n Ch,650V,20.2A, to-220-3,transistor Polarity-N Channel, continuous Drain Current Id-20.2A, drain Source Voltage Vds-650V, on Resistance Rdson-0.17Ohm, rdson Test Voltage Vgs-10V, threshold Voltage Vgs-3V, power Rohs Compliant: Yes |Infineon Technologies IPA60R190E6XKSA1
CoolMOS™ E6 combines Infineon's experience as the leading superjunction MOSFET supplier with best-in-class innovation. The offered devices provide all benefits of a fast switching SJ MOSFET while not sacrificing ease-of-use. Extremely low switching and conduction losses make switching applications even more efficient, compact, lighter and cooler.600V CoolMOS™ E6 is replacement for 600V CoolMOS™ C3650V CoolMOS™ E6 is replacement for 650V CoolMOS™ C3
제조업체 별칭
Infineon에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. Infineon는 다음 이름으로도 알려져 있습니다:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
기술 사양
Physical
Case/PackageTO-220-3
Contact PlatingTin
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)20.2 A
Drain to Source Breakdown Voltage650 V
Drain to Source Resistance190 mΩ
Drain to Source Voltage (Vdss)600 V
Element ConfigurationSingle
Fall Time8 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance1.4 nF
Max Operating Temperature150 °C
Max Power Dissipation34 W
Min Breakdown Voltage600 V
Min Operating Temperature-55 °C
Number of Elements1
On-State Resistance190 mΩ
Package Quantity500
Power Dissipation34 W
Rds On Max190 mΩ
Rise Time10 ns
Schedule B8541290080
Turn-Off Delay Time90 ns
Turn-On Delay Time12 ns
규정 준수
환경 분류
China RoHSCompliant
Halogen FreeHalogen Free
Lead FreeLead Free
REACH SVHCYes
RoHSCompliant
규정 준수 정책