공급망
Country of OriginGermany, Mainland China, Malaysia
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2009-06-19
Lifecycle StatusNRND (Last Updated: 3 weeks ago)
관련 부품
onsemiFCPF190N60E
N-Channel Power MOSFET, SUPERFET® II, Easy Drive, 600 V, 20.6 A, 190 mΩ, TO-220F
InfineonSPA20N60C3XKSA1
TRANSISTOR, MOSFET, N-CHANNEL, 650V, 20.7A, 0.19 OHM, TO-220FP, COOLMOS POWER
VishaySIHF22N60E-GE3
35W(Tc) 30V 4V@ 250¦ÌA 86nC@ 10 V 1N 600V 180m¦¸@ 11A,10V 21A 1.92nF@100V TO-220 16.12mm
STMicroelectronicsSTF28N60M2
N-channel 600 V, 0.135 Ohm typ., 22 A MDmesh M2 Power MOSFETs in TO-220FP package
STMicroelectronicsSTF24NM60N
N-channel 600 V, 0.168 Ohm, 17 A MDmesh(TM) II Power MOSFET TO-220FP
STMicroelectronicsSTF24N60M2
N-channel 600 V, 0.168 Ohm typ., 18 A MDmesh M2 Power MOSFET in TO-220FP package
설명
유통업체에서 제공한 Infineon IPP60R190C6XKSA1에 대한 설명입니다.
MOSFET N-CH 600V 20.2A TO220 / Trans MOSFET N-CH 650V 20.2A Automotive 3-Pin(3+Tab) TO-220 Tube
Power MOSFET, N Channel, 600 V, 20.2 A, 190 Milliohms, TO-220, 3 Pins, Through Hole
Transistor: N-MOSFET; unipolar; 600V; 20.2A; 151W; PG-TO220-3
151KW 20V 3.5V 63nC@ 10V 1N 600V 190m¦¸@ 10V 20.2A 1.4nF@ 100V TO-220 , 10mm*440cm*9.25mm
Power Field-Effect Transistor, 20.2A I(D), 600V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
CoolMOS™ C6 combines Infineon's experience as the leading superjunction MOSFET supplier with best-in-class innovation, PG-TO220-3, RoHS
Infineon SCT
MOSFET,N CH,600V,20.2A,TO220; Transistor Polarity:N Channel; Continuous Drain Current Id:20.2A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.17ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:151W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-220; No. of Pins:3; Current Id Max:20.2A; Voltage Vgs Max:30V
CoolMOS™ C6 combines Infineon's experience as the leading superjunction MOSFET supplier with best-in-class innovation. The C6 devices provide all benefits of a fast switching superjunction MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, compact, lighter and cooler.600V CoolMOS™ C6 is replacement for 600V CoolMOS™ C3650V CoolMOS™ C6 is replacement for 650V CoolMOS™ C3
제조업체 별칭
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- Infineon Technologies
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- INFIN
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- INFENION
- SIM
- INFIEON
- INFINEON TECH
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- IR/INFINEON
- INFINEON/IR
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- INFINEON TECHNOLOGIE
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- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
기술 사양
Physical
Case/PackageTO-220-3
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)20.2 A
Drain to Source Breakdown Voltage600 V
Drain to Source Resistance190 mΩ
Drain to Source Voltage (Vdss)600 V
Element ConfigurationSingle
Fall Time9 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance1.4 nF
Max Operating Temperature150 °C
Max Power Dissipation151 W
Min Breakdown Voltage600 V
Min Operating Temperature-55 °C
Nominal Vgs3 V
Number of Elements1
On-State Resistance190 mΩ
Package Quantity500
Power Dissipation151 W
Rds On Max190 mΩ
Rise Time11 ns
Schedule B8541290080
Turn-Off Delay Time110 ns
Turn-On Delay Time15 ns
규정 준수
환경 분류
China RoHSCompliant
Halogen FreeHalogen Free
Lead FreeLead Free
REACH SVHCYes
RoHSCompliant
규정 준수 정책