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100V Single N-Channel HEXFET Power MOSFET in a TO-220AB FullPak, FULLPAK220-3, RoHS
설명
유통업체에서 제공한 Infineon IPA180N10N3GXKSA1에 대한 설명입니다.
Trans MOSFET N-CH 100V 28A 3-Pin(3+Tab) TO-220FP
Power Field-Effect Transistor, 28A I(D), 100V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Infineon's 100V OptiMOS™ power MOSFETs offer superior solutions for high efficiency, high power-density SMPS, PG-TO220-3, RoHS
Infineon SCT
Infineon's 100 V OptiMOS™ power MOSFETs offer superior solutions for high efficiency, high power-density SMPS. Compared to the next best technology this family achieves a reduction of 30% in both RDS(on) and FOM (figure of merit).
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- Infineon Technologies
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- INFENION
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- INFIEON
- INFINEON TECH
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- INFIENON
- IR/INFINEON
- INFINEON/IR
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- INFINEON/SIEMENS
- LNFINEON
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- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
기술 사양
Physical
Case/PackageTO-220-3
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)28 A
Drain to Source Resistance18 mΩ
Drain to Source Voltage (Vdss)100 V
Fall Time3 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance1.35 nF
Max Dual Supply Voltage100 V
Max Operating Temperature175 °C
Max Power Dissipation30 W
Min Breakdown Voltage100 V
Min Operating Temperature-55 °C
Number of Elements1
On-State Resistance18 mΩ
Package Quantity500
Power Dissipation30 W
Rds On Max18 mΩ
Rise Time5 ns
Schedule B8541290080
Turn-Off Delay Time18 ns
Turn-On Delay Time11 ns
규정 준수
환경 분류
China RoHSCompliant
Halogen FreeHalogen Free
Lead FreeLead Free
REACH SVHCYes
RoHSCompliant
규정 준수 정책