공급망
Country of OriginAustria, Germany, Mainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2014-06-19
Lifecycle StatusProduction (Last Updated: 1 month ago)
관련 부품
InfineonIPA032N06N3GXKSA1
Power MOSFET, N Channel, 60 V, 84 A, 2.6 Milliohms, TO-220, 3 Pins, Through Hole
onsemiFDPF041N06BL1
MOSFET N-CH 60V 77A TO-220F / Trans MOSFET N-CH Si 60V 77A 3-Pin(3+Tab) TO-220F Tube
STMicroelectronicsSTP140N6F7
N-channel 60 V, 0.0031 Ohm typ., 80 A STripFET F7 Power MOSFET in TO-220 package
설명
유통업체에서 제공한 Infineon IPA040N06NXKSA1에 대한 설명입니다.
OptiMOS Series N-Channel 60 V 69 A (Tc) 36 W (Tc) MOSFET - PG-TO220-FP
Trans MOSFET N-CH 60V 69A 3-Pin(3+Tab) TO-220FP Tube
Power Field-Effect Transistor, 69A I(D), 60V, 0.004ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
OptiMOS™ 5 60V is optimized for synchronous rectification in switched mode power supplies (SMPS) such as those found in servers and desktops and tablet charger. In addition these devices are a perfect choice for a broad range of industrial applications including motor control, solar micro inverter and fast switching DC-DC converter.
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- Infineon Technologies
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- INFINEON TECH
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- IR/INFINEON
- INFINEON/IR
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- INFINEON TECHNOLOGIE
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- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
기술 사양
Physical
Case/PackageTO-220-3
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)69 A
Drain to Source Resistance4 mΩ
Drain to Source Voltage (Vdss)60 V
Fall Time8 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance2.7 nF
Max Dual Supply Voltage60 V
Max Operating Temperature175 °C
Max Power Dissipation36 W
Min Breakdown Voltage60 V
Min Operating Temperature-55 °C
Number of Elements1
On-State Resistance4 mΩ
Package Quantity500
Power Dissipation36 W
Rds On Max4 mΩ
Rise Time16 ns
Turn-Off Delay Time33 ns
Turn-On Delay Time14 ns
규정 준수
환경 분류
China RoHSCompliant
Halogen FreeHalogen Free
Lead FreeLead Free
REACH SVHCYes
RoHSCompliant
규정 준수 정책