공급망
Country of OriginAustria, Germany, Mainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2014-06-19
Lifecycle StatusProduction (Last Updated: 2 weeks ago)
관련 부품
InfineonIPP80N06S407AKSA2
60V, N-Ch, 7.1 mΩ max, Automotive MOSFET, TO-220, OptiMOS™-T2, PG-TO220-3, RoHS
onsemiFDPF041N06BL1
MOSFET N-CH 60V 77A TO-220F / Trans MOSFET N-CH Si 60V 77A 3-Pin(3+Tab) TO-220F Tube
STMicroelectronicsSTP75NF75FP
N channel 75 V, 0.0095 Ohm typ., 80 A STripFET II Power MOSFET in TO-220FP package
설명
유통업체에서 제공한 Infineon IPA029N06NXKSA1에 대한 설명입니다.
Trans MOSFET N-CH 60V 84A 3-Pin(3+Tab) TO-220FP Tube
Power Field-Effect Transistor, 84A I(D), 60V, 0.0029ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
OptiMOS™ 5 60V is optimized for synchronous rectification in switched mode power supplies (SMPS) such as those found in servers and desktops and tablet charger. In addition these devices are a perfect choice for a broad range of industrial applications including motor control, solar micro inverter and fast switching DC-DC converter.
Mosfet, N-Ch, 60V, 84A, To-220Fp; Channel Type:N Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:84A; Transistor Mounting:Through Hole; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:2.8V Rohs Compliant: Yes |Infineon Technologies IPA029N06NXKSA1
제조업체 별칭
Infineon에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. Infineon는 다음 이름으로도 알려져 있습니다:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
기술 사양
Physical
Case/PackageTO-220-3
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)84 A
Drain to Source Breakdown Voltage60 V
Drain to Source Resistance2.9 mΩ
Drain to Source Voltage (Vdss)60 V
Fall Time11 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance4.1 nF
Max Dual Supply Voltage60 V
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation38 W
Min Breakdown Voltage60 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
On-State Resistance2.9 mΩ
Package Quantity500
Power Dissipation38 W
Rds On Max2.9 mΩ
Rise Time15 ns
Turn-Off Delay Time30 ns
Turn-On Delay Time16 ns
Dimensions
Height19.6 mm
규정 준수
환경 분류
China RoHSCompliant
Halogen FreeHalogen Free
Lead FreeLead Free
REACH SVHCYes
RoHSCompliant
규정 준수 정책