공급망
Country of OriginGermany, Mainland China, Malaysia
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2010-02-11
Lifecycle StatusProduction (Last Updated: 2 weeks ago)
설명
유통업체에서 제공한 Infineon IGW50N60H3FKSA1에 대한 설명입니다.
Trans IGBT Chip N-CH 600V 100A 333000mW 3-Pin(3+Tab) TO-247 Tube
Infineon IGW50N60H3FKSA1 IGBT, 100 A 600 V, 3-Pin PG-TO247-3, Through Hole
High speed 600 V, 50 A single TRENCHSTOP™ IGBT3 in a TO247 package provides the best compromise between switching and conduction losses. The key feature of this family is a MOSFET-like turn-off switching behavior, leading to low turn off losses.
IGBT,600V,50A,TO247; Transistor Type:IGBT; DC Collector Current:50A; Collector Emitter Voltage Vces:2.3V; Power Dissipation Pd:333W; Collector Emitter Voltage V(br)ceo:600V; Operating Temperature Range:-40°C to +175°C; Transistor Case Style:TO-247; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Power Dissipation Max:333W
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기술 사양
Physical
Case/PackageTO-247
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Collector Emitter Breakdown Voltage600 V
Collector Emitter Saturation Voltage2.3 V
Collector Emitter Voltage (VCEO)600 V
Continuous Collector Current100 A
Element ConfigurationSingle
Max Collector Current100 A
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation333 W
Min Operating Temperature-40 °C
Number of Elements1
Package Quantity240
Power Dissipation333 W
Turn-Off Delay Time235 ns
Turn-On Delay Time23 ns
Dimensions
Height25.4 mm