대체 부품
Price @ 1000
$ 3.04
$ 3.04
Stock
518,124
518,124
Authorized Distributors
6
6
Mount
-
-
Case/Package
TO-247-3
TO-247-3
Collector Emitter Breakdown Voltage
1.2 kV
1.2 kV
Max Collector Current
50 A
50 A
Power Dissipation
349 W
349 W
Collector Emitter Saturation Voltage
2.2 V
2.2 V
Reverse Recovery Time
195 ns
195 ns
공급망
Country of OriginMainland China, Malaysia
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2006-11-21
Lifecycle StatusNRND (Last Updated: 1 month ago)
관련 부품
onsemiNGTB25N120FLWG
Igbt Single Transistor, 50 A, 2 V, 192 W, 1.2 Kv, To-247, 3 Rohs Compliant: Yes
InfineonIGW25N120H3FKSA1
Infineon IGW25N120H3FKSA1 IGBT, 50 A 1200 V, 3-Pin TO-247, Through Hole
onsemiNGTB25N120IHLWG
Igbt Single Transistor, 50 A, 1.85 V, 192 W, 1.2 Kv, To-247, 3 Rohs Compliant: Yes
InfineonIRG7PH35UD1PBF
1200V UltraFast Discrete IGBT in a TO-247 package with Ultra-Low Vf Diode
설명
유통업체에서 제공한 Infineon IKW25N120T2FKSA1에 대한 설명입니다.
IKW25N120T2 Series 1200 V 50 A Through Hole IGBT TrenchStop® - PG-TO-247-3
1200 V IGBT with anti-parallel diode in TO-247 package, PG-TO247-3, RoHS
Infineon SCT
Trans IGBT Chip N-CH 1200V 50A 349W Automotive 3-Pin(3+Tab) TO-247 Tube
IGBT+ DIODE,1200V,25A,TO247; Transistor Type:IGBT; DC Collector Current:25A; Collector Emitter Voltage Vces:2.2V; Power Dissipation Pd:349W; Collector Emitter Voltage V(br)ceo:1.2kV; Operating Temperature Range:-40°C to +175°C; Transistor Case Style:TO-247; No. of Pins:3; Power Dissipation Max:349W
Hard-switching 1200 V, 25 A TRENCHSTOP™ IGBT4 co-packed with free-wheeling diode in a TO-247 package, provides significant improvement of static as well as dynamic performance of the device, due to combination of trench-cell and fieldstop concept. The combination of IGBT with soft recovery emitter controlled diode further minimizes the turn-on losses. The highest efficiency is reached due to the best compromise between switching and conduction losses.
제조업체 별칭
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- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
기술 사양
Physical
Case/PackageTO-247-3
Number of Pins3
Number of Terminals3
Technical
Collector Emitter Breakdown Voltage1.2 kV
Collector Emitter Saturation Voltage2.2 V
Collector Emitter Voltage (VCEO)1.2 kV
Element ConfigurationSingle
Forward Voltage1.65 V
Max Collector Current50 A
Max Operating Temperature150 °C
Max Power Dissipation349 W
Min Operating Temperature-40 °C
Number of Elements1
Package Quantity240
Power Dissipation349 W
Reverse Recovery Time195 ns
Schedule B8541290080
Dimensions
Height21.1 mm
Length16.13 mm
Width5.21 mm