1200 V, 40 A single HighSpeed 3 H3 in a TO247 package provides the best compromise between switching and conduction losses. The key feature of this family is a MOSFET-like turn-off switching behavior, leading to low turn off losses.
IGBT,1200V,40A,TO247; Transistor Type:IGBT; DC Collector Current:40A; Collector Emitter Voltage Vces:2.4V; Power Dissipation Pd:483W; Collector Emitter Voltage V(br)ceo:1.2kV; Operating Temperature Range:-40°C to +175°C; Transistor Case Style:TO-247; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Power Dissipation Max:483W