공급망
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2014-11-05
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2016-09-01
LTD Date2017-03-01
관련 부품
International RectifierIRG8P60N120KD-EPBF
Trans IGBT Chip N-CH 1200V 100A 420000mW 3-Pin(3+Tab) TO-247AD Tube
International RectifierIRG8P40N120KDPBF
Trans IGBT Chip N-CH 1200V 60A 305000mW 3-Pin(3+Tab) TO-247AC Tube
InfineonIRG7PH42UPBF
1200V TRENCH IGBT FOR INDUSTRIAL MODULE, SIZE 4.2 (NO DIODE) | Infineon IRG7PH42UPBF
onsemiFGH40T120SMD-F155
IGBT 1200V 80A 555W TO247-3 / Trans IGBT Chip N-CH 1200V 80A 555000mW 3-Pin(3+Tab) TO-247 Tube
설명
유통업체에서 제공한 Infineon IRG8P50N120KD-EPBF에 대한 설명입니다.
Trans IGBT Chip N-CH 1200V 80A 350000mW 3-Pin(3+Tab) TO-247AD Tube
IRG8P50N120 - DISCRETE IGBT WITH
G8, 1200V, 50A, COPAK-247AD, TUBE
350W 1.7V 2V@ 15V,35A 80A TO-247AD 20.7mm
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Insulated Gate Bipolar Transistor, 80A I(C), 1200V V(BR)CES, N-Channel, TO-247AD
CAP CER 560PF 100V C0G/NP0 RAD
제조업체 별칭
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- Infineon Technologies
- INF
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- SIM
- INFIEON
- INFINEON TECH
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- INFIENON
- IR/INFINEON
- INFINEON/IR
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- INFINEON/SIEMENS
- LNFINEON
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- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
기술 사양
Physical
Case/PackageTO-247-3
MountThrough Hole
Number of Terminals3
Weight6.500007 g
Technical
Collector Emitter Breakdown Voltage1.2 kV
Collector Emitter Saturation Voltage2 V
Collector Emitter Voltage (VCEO)1.2 kV
Element ConfigurationSingle
Max Collector Current80 A
Max Operating Temperature150 °C
Max Power Dissipation350 W
Min Operating Temperature-40 °C
Number of Elements1
Reverse Recovery Time170 ns