Infineon BSZ050N03MSGATMA1

Power MOSFET, N Channel, 30 V, 40 A, 0.0038 ohm, PG-TSDSON, Surface Mount

30V 15A 2.1W 4.5m´Î@10V20A 2V@250Ã×A N Channel PG-TSDSON-8 MOSFETs ROHS

Trans MOSFET N-CH 30V 15A 8-Pin TSDSON T/R

Power Field-Effect Transistor, 40A I(D), 30V, 0.0057ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

OptiMOS™3 M-Series Power-MOSFET

2.1W(Ta),48W(Tc) 20V 2V@ 250¦ÌA 46nC@ 10 V 1N 30V 4.5m¦¸@ 20A,10V 15A 3.6nF@15V TSDSON-8 3.3mm*3.3mm*1.1mm

BSZ050N03 - 12V-300V N-CHANNEL P

MOSFET, N CH, 40A, 30V, PG-TSDSON-8; Transistor Polarity:N Channel; Drain Source Voltage Vds:30V; On Resistance Rds(on):3.8mohm; Rds(on) Test Voltage Vgs:10V; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:PG-TSDSON; No. of Pins:8; Current Id Max:40A; Power Dissipation Pd:48W; Transistor Type:Power MOSFET; Voltage Vgs Max:20V

Ultra low gate and output charge, together with lowest on-state resistance in small footprint packages, make OptiMOS™ 25V the best choice for the demanding requirements of voltage regulator solutions in servers, datacom and telecom applications. OptiMOS™ 30V products are tailored to the needs of power management in notebook by improved EMI behavior, as well as increased battery life. Available in halfbridge configuration (power stage 5x6)