관련 부품
Diodes Inc.ZXMP6A17GQTA
MOSFET P-Ch 2W(Ta) 20V 1V@250µA 17.7nC@10V 60V 125mΩ@2.2A,10V 3A 637pF@30V SOT-223-3 SMD
InfineonBSP171PL6327HTSA1
MOSFET P-CH 60V 1.9A SOT-223 / Trans MOSFET P-CH 60V 1.9A Automotive 4-Pin(3+Tab) SOT-223 T/R
onsemiHUFA75309T3ST
1.1W(Ta) 4V@ 250µA 23nC@ 20V 1individualNChannel 55V 70mΩ@ 3A,10V 352pF@25V SOT-223-4 SMD mount
설명
유통업체에서 제공한 Infineon BSP320SL6327HTSA1에 대한 설명입니다.
Trans MOSFET N-CH 60V 2.9A Automotive 4-Pin(3+Tab) SOT-223 T/R
1.8W(Ta) 20V 4V@ 20µA 12nC@ 10 V 1individualNChannel 60V 120mΩ@ 2.9A,10V 340pF@25V SOT SMD mount
Power Field-Effect Transistor, 2.9A I(D), 60V, 0.12ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
BSP320 SIPS SMALL-SIGNAL N-CHANNEL;
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- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
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- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
기술 사양
Physical
Case/PackageTO-261-4
MountSurface Mount
Number of Pins4
Number of Terminals4
Technical
Continuous Drain Current (ID)2.9 A
Drain to Source Resistance120 mΩ
Drain to Source Voltage (Vdss)60 V
Gate to Source Voltage (Vgs)20 V
Input Capacitance340 pF
Max Operating Temperature150 °C
Max Power Dissipation1.8 W
Min Breakdown Voltage60 V
Min Operating Temperature-55 °C
Number of Elements1
PackagingDigi-Reel®
Power Dissipation1.8 W
Rds On Max120 mΩ