관련 부품
InfineonBSP318SL6327HTSA1
MOSFET N-CH 60V 2.6A SOT223-4 N-Channel 60 V 2.6A (Ta) 1.8W (Ta) Surface Mount PG-SOT223-4-21
InfineonBSP315PL6327HTSA1
MOSFET P-CH 60V 1.17A SOT223-4 P-Channel 60 V 1.17A (Ta) 1.8W (Ta) Surface Mount PG-SOT223-4-21
InfineonBSP171PL6327HTSA1
MOSFET P-CH 60V 1.9A SOT-223 / Trans MOSFET P-CH 60V 1.9A Automotive 4-Pin(3+Tab) SOT-223 T/R
onsemiHUFA75309T3ST
1.1W(Ta) 4V@ 250µA 23nC@ 20V 1individualNChannel 55V 70mΩ@ 3A,10V 352pF@25V SOT-223-4 SMD mount
설명
유통업체에서 제공한 Infineon BSP320SL6327HTSA1에 대한 설명입니다.
MOSFET N-CH 60V 2.9A SOT223-4 N-Channel 60 V 2.9A (Ta) 1.8W (Ta) Surface Mount PG-SOT223-4-21
Trans MOSFET N-CH 60V 2.9A Automotive 4-Pin(3+Tab) SOT-223 T/R
1.8W(Ta) 20V 4V@ 20µA 12nC@ 10 V 1individualNChannel 60V 120mΩ@ 2.9A,10V 340pF@25V SOT SMD mount
Power Field-Effect Transistor, 2.9A I(D), 60V, 0.12ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
BSP320 SIPS SMALL-SIGNAL N-CHANNEL;
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기술 사양
Physical
Case/PackageTO-261-4
MountSurface Mount
Number of Pins4
Number of Terminals4
Technical
Continuous Drain Current (ID)2.9 A
Drain to Source Resistance120 mΩ
Drain to Source Voltage (Vdss)60 V
Gate to Source Voltage (Vgs)20 V
Input Capacitance340 pF
Max Operating Temperature150 °C
Max Power Dissipation1.8 W
Min Breakdown Voltage60 V
Min Operating Temperature-55 °C
Number of Elements1
PackagingDigi-Reel®
Power Dissipation1.8 W
Rds On Max120 mΩ