가격 및 재고
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Verical | HUFA75309T3ST | 31,959 | 765 | |||||||||
| Rochester Electronics | HUFA75309T3ST | 34,459 | 3h | |||||||||
| Avnet | HUFA75309T3ST | 0 | 2500 | 5h | ||||||||
| Microchip USA | HUFA75309T3ST | 303 | 3500 | Tray | 21h | |||||||
| Worldway Electronics | HUFA75309T3ST | 23,933 | 7 | Bulk | 1d |
공급망
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2000-12-08
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2008-06-06
LTD Date2008-12-06
관련 부품
InfineonAUIRFL024NTR
Automotive Q101 55V Single N-Channel HEXFET Power MOSFET in a SOT-223 Package, SOT223-4, RoHS
InfineonAUIRLL024ZTR
Automotive Q101 55V Single N-Channel HEXFET Power MOSFET in a SOT-223 Package, SOT223-4, RoHS
설명
유통업체에서 제공한 onsemi HUFA75309T3ST에 대한 설명입니다.
TRANS MOSFET N-CH 55V 3A 4PIN SOT-223
3 A 55 V 0.07 ohm N-CHANNEL Si POWER MOSFET
Power Field-Effect Transistor, 3A I(D), 55V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
MOSFETs 19a, 55V N-Channel UltraFET
제조업체 별칭
onsemi에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. onsemi는 다음 이름으로도 알려져 있습니다:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
기술 사양
Physical
Case/PackageTO-261-4
MountSurface Mount
Number of Pins4
Number of Terminals4
Technical
Continuous Drain Current (ID)3 A
Current Rating3 A
Drain to Source Breakdown Voltage55 V
Drain to Source Resistance70 mΩ
Drain to Source Voltage (Vdss)55 V
Element ConfigurationSingle
Fall Time20 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance352 pF
Max Operating Temperature150 °C
Max Power Dissipation1.1 W
Min Breakdown Voltage55 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation1.1 W
Rds On Max70 mΩ
Rise Time20 ns
Turn-Off Delay Time12 ns
Voltage Rating (DC)55 V