관련 부품
InfineonBSP296NH6433XTMA1
MOSFET N-CH 100V 1.2A SOT223-4 / N-Channel 100 V 1.2A (Ta) 1.8W (Ta) Surface Mount PG-SOT223-4
InfineonBSP171PL6327HTSA1
MOSFET P-CH 60V 1.9A SOT-223 / Trans MOSFET P-CH 60V 1.9A Automotive 4-Pin(3+Tab) SOT-223 T/R
NXP SemiconductorsPMT760EN,135
Small Signal Field-Effect Transistor, 0.9A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
NXP SemiconductorsPMT760EN,115
MOSFET N-CH 100V SC-73 / Trans MOSFET N-CH 100V 0.9A 4-Pin(3+Tab) SC-73 T/R
설명
유통업체에서 제공한 Infineon BSP315PL6327HTSA1에 대한 설명입니다.
MOSFET P-CH 60V 1.17A SOT-223
P-Ch MOSFET 60V 1.8W(Ta) 20V Vgs 2V@160µA Qg 7.8nC@10V Rds(on) 800mΩ@1.17A,10V Ciss 160pF@25V SOT, SMD
MOSFET P-CH 60V 1.17A SOT223-4
Power Field-Effect Transistor, 1.17A I(D), 60V, 0.8ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
BSP315 SIPS SMALL-SIGNAL P-CHANNEL;
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기술 사양
Physical
Case/PackageTO-261-4
MountSurface Mount
Number of Pins4
Number of Terminals4
Technical
Continuous Drain Current (ID)1.17 A
Drain to Source Resistance800 mΩ
Drain to Source Voltage (Vdss)60 V
Fall Time19 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance160 pF
Max Operating Temperature150 °C
Max Power Dissipation1.8 W
Min Breakdown Voltage60 V
Min Operating Temperature-55 °C
Number of Elements1
PackagingTape and Reel
Power Dissipation1.8 W
Rds On Max800 mΩ
Rise Time9 ns
Turn-Off Delay Time32 ns
Turn-On Delay Time24 ns
규정 준수
환경 분류
China RoHSCompliant
Radiation HardeningNo
RatingsAEC-Q101
REACH SVHCUnaffected
RoHSCompliant
규정 준수 정책