가격 및 재고
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Avnet | BSD235CH6327XTSA1 | 210,000 | 3K | 19h | ||||||||
| Newark | BSD235CH6327XTSA1 | 9,240 | 5 | Cut Tape | ||||||||
| Future Electronics | BSD235CH6327XTSA1 | 9,000 | 3K | Tape & Reel | ||||||||
| Arrow Electronics | BSD235CH6327XTSA1 | 35,867 | 1 | |||||||||
| DigiKey | BSD235CH6327XTSA1CT-ND | 21,431 | 1 | Cut Tape |
대체 부품
Price @ 1000
$ 0.117
$ 0.116
Stock
4,146,558
251,092
Authorized Distributors
6
6
Mount
Surface Mount
-
Case/Package
SOT-363
-
Drain to Source Voltage (Vdss)
-20 V
-
Continuous Drain Current (ID)
950 mA
1 A
Threshold Voltage
-
-
Rds On Max
350 mΩ
-
Gate to Source Voltage (Vgs)
12 V
-
Power Dissipation
500 mW
-
Input Capacitance
47 pF
-
공급망
Country of OriginAustria, Mainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2012-02-16
Lifecycle StatusProduction (Last Updated: 3 months ago)
관련 부품
Diodes Inc.DMC3400SDW-7
Dual MOSFET, Complementary N and P Channel, 30 V, 30 V, 650 mA, 650 mA, 0.2 ohm
InfineonBSD214SNH6327XTSA1
Mosfet, N-Ch, 20V, 1.5A, Sot-363 Rohs Compliant: Yes |Infineon Technologies BSD214SNH6327XTSA1
onsemiNTJD2152PT1G
Small Signal MOSFET 8V 775mA 300 mOhm Dual P-Channel SC−88/SC70−6/SOT−363 with ESD Protection
설명
유통업체에서 제공한 Infineon BSD235CH6327XTSA1에 대한 설명입니다.
Dual MOSFET, Complementary N and P Channel, 20 V, 20 V, 950 mA, 950 mA, 0.266 ohm
MOSFET Devices; INFINEON; BSD235CH6327XTSA1; -20 V; 530 mA; 12 V; 500 mW
Small Signal Field-Effect Transistor, 0.95A I(D), 20V, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET
MOSFET, N & P CH, 20V, 0.95A, SOT-363-6; Transistor Polarity:N and P Complement; Continuous Drain Current Id:950mA; Drain Source Voltage Vds:20V; On Resistance Rds(on):0.266ohm; Rds(on) Test Voltage Vgs:4.5V; Threshold V
500mW 12V 1.2V@ N Channel,600mV@ P Channel 0.34nC@ 4.5V @ NChannel,0.4nC@ 4.5V @ PChannel 1N,1P 20V 350m¦¸@ 4.5V @ N Channel,1.2¦¸@ 4.5V @ P Channelm¦¸ 47pF@ 10V @ N Channel,37pF@ 10V @ P Channel SOT-363-6 2.9mm*1.3mm*1.1mm
Complementary power MOSFETs - an n-channel and a p-channel power MOSFET within the same package - are part of Infineon’s famous low voltage OptiMOS™ families, the market leader in high efficiency solutions for power generation (e.g. solar micro inverter), power supply (e.g. server and telecom) and power consumption (e.g. electric vehicle).
제조업체 별칭
Infineon에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. Infineon는 다음 이름으로도 알려져 있습니다:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
기술 사양
Physical
Case/PackageSOT-363
MountSurface Mount
Number of Pins6
Number of Terminals6
Technical
Continuous Drain Current (ID)950 mA
Drain to Source Resistance350 mΩ
Drain to Source Voltage (Vdss)-20 V
Gate to Source Voltage (Vgs)12 V
Input Capacitance47 pF
Max Dual Supply Voltage-20 V
Max Operating Temperature150 °C
Max Power Dissipation500 mW
Min Breakdown Voltage20 V
Min Operating Temperature-55 °C
Number of Elements2
On-State Resistance350 mΩ
Package Quantity3000
PackagingTape & Reel
Power Dissipation500 mW
Rds On Max350 mΩ
Schedule B8541210080
규정 준수
환경 분류
China RoHSCompliant
Halogen FreeHalogen Free
Lead FreeLead Free
RatingsAEC-Q101
REACH SVHCYes
RoHSCompliant
규정 준수 정책