Infineon BSC040N08NS5ATMA1

Single N-Channel 80 V 4 mOhm 54 nC OptiMOS Power Mosfet - PG-TDSON-8, PG-TDSON-8, RoHS

MOSFET Devices; INFINEON; BSC040N08NS5ATMA1; 80 V; 100 A; 20 V; 104 W

2.5KW 20V 3.8V 43nC@ 10V 2N 80V 4m¦¸@ 10V 100A 3nF@ 40V TDSON(EP) , 5.15mm*590cm*1mm

Trans MOSFET N-CH 80V 100A 8-Pin TDSON EP T/R

Power Field-Effect Transistor, 121A I(D), 80V, 0.004ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

MOSFET N-Ch 80V 100A 4m OptiMOS5 TDSON8

Mosfet, n-Ch,80V,100A, tdson, transistor Polarity-N Channel, continuous Drain Current Id-100A, drain Source Voltage Vds-80V, on Resistance Rdson-0.0034Ohm, rdson Test Voltage Vgs-10V, threshold Voltage Vgs-3V, power Dissipation Rohs Compliant: Yes |Infineon Technologies BSC040N08NS5ATMA1

OptiMOS™ 5 80 V power MOSFET, especially designed for Synchronous Rectification for telecom and server power supplies. In addition, the device can also be utilized in other industrial applications such as solar, low voltage drives and adapter. Within seven different packages, the OptiMOS™ 5 80 V MOSFETs offer the industry’s lowest RDS(on). Additionally, compared to the previous generation, OptiMOS™ 5 80 V has an RDS(on) reduction of up to 43%.