공급망
Country of OriginAustria, Germany, Mainland China, Malaysia
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2014-12-17
Lifecycle StatusProduction (Last Updated: 3 weeks ago)
관련 부품
STMicroelectronicsSTL130N8F7
N-channel 80 V, 3 mOhm typ., 130 A STripFET F7 Power MOSFET in a PowerFLAT 5x6 package
onsemiFDMS86300DC
MOSFET, N CH, 80V, 0.0026OHM, 76A, POWER 56-8; Transistor Polarity:N Channel; Co
InfineonBSC040N08NS5ATMA1
Single N-Channel 80 V 4 mOhm 54 nC OptiMOS Power Mosfet - PG-TDSON-8, PG-TDSON-8, RoHS
STMicroelectronicsSTL120N8F7
N-channel 80 V, 3.7 mOhm typ., 120 A STripFET F7 Power MOSFET in a PowerFLAT 5x6 package
설명
유통업체에서 제공한 Infineon BSC037N08NS5ATMA1에 대한 설명입니다.
Power MOSFET, N Channel, 80 V, 100 A, 0.0034 ohm, TDSON, Surface Mount
OptiMOS™ 5 80 V power MOSFET, especially designed for Synchronous Rectification for telecom and server power supplies. In addition, the device can also be utilized in other industrial applications such as solar, low voltage drives and adapter. Within seven different packages, the OptiMOS™ 5 80 V MOSFETs offer the industry’s lowest RDS(on). Additionally, compared to the previous generation, OptiMOS™ 5 80 V has an RDS(on) reduction of up to 43%.
Mosfet, N-Ch, 80V, 100A, 150Deg C, 114W; Channel Type:N Channel; Drain Source Voltage Vds:80V; Continuous Drain Current Id:100A; Transistor Mounting:Surface Mount; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:3V Rohs Compliant: Yes |Infineon Technologies BSC037N08NS5ATMA1
제조업체 별칭
Infineon에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. Infineon는 다음 이름으로도 알려져 있습니다:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
기술 사양
Physical
MountSurface Mount
Number of Pins8
Number of Terminals8
Weight506.605978 mg
Technical
Continuous Drain Current (ID)22 A
Drain to Source Breakdown Voltage80 V
Drain to Source Resistance3.7 mΩ
Drain to Source Voltage (Vdss)80 V
Element ConfigurationSingle
Fall Time7 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance3.2 nF
Max Dual Supply Voltage80 V
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation2.5 W
Min Breakdown Voltage80 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
On-State Resistance3.7 mΩ
Package Quantity5000
PackagingTape & Reel
Power Dissipation2.5 W
Rds On Max3.7 mΩ
Rise Time10 ns
Schedule B8541290080
Threshold Voltage3 V
Turn-Off Delay Time26 ns
Turn-On Delay Time14 ns
Dimensions
Height1.1 mm
규정 준수
환경 분류
China RoHSNon-Compliant
Halogen FreeHalogen Free
Lead FreeContains Lead
REACH SVHCNo
RoHSCompliant
규정 준수 정책