Infineon BSC024NE2LSATMA1

Power MOSFET, N Channel, 25 V, 100 A, 0.002 ohm, TDSON, Surface Mount

Trans MOSFET N-CH 25V 25A 8-Pin TDSON EP T/R

48W 20V 23nC 1N 25V 2.4m¦¸@ 10V 1.7nF@ 12V TDSON-8-EP , 5.9mm*5.15mm*1.27mm

MOSFETs; BSC024NE2LS; INFINEON TECHNOLOGIES; 25 V; 25 A; 20 V; 48 W

Power Field-Effect Transistor, 25A I(D), 25V, 0.0034ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

MOSFET N-Ch 25A 25V OptiMOS TDSON8EP

BSC024NE2LS infineon/ DFN-85x6

With the OptiMOS™ 25V product family, Infineon sets new standards in power density and energy efficiency for discrete power MOSFETs and system in package. Ultra low gate and output charge, together with lowest on-state resistance in small footprint packages, make OptiMOS™ 25V the best choice for the demanding requirements of voltage regulator solutions in servers, datacom and telecom applications. Available in halfbridge configuration (power stage 5x6).

MOSFET, N-CH, 25V, 100A, TDSON-8; Transistor Polarity: N Channel; Continuous Drain Current Id: 100A; Drain Source Voltage Vds: 25V; On Resistance Rds(on): 0.002ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2V; Power Dissipation Pd: 48W; Transistor Case Style: TDSON; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)