공급망
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2013-09-03
Lifecycle StatusObsolete (Last Updated: 5 months ago)
LTB Date2019-11-15
LTD Date2020-05-15
관련 부품
InfineonIRFH4234TRPBF
25V Single N-Channel HEXFET Power MOSFET in a 5mm X 6mm PQFN package, PG-TDSON-8, RoHS
설명
유통업체에서 제공한 Infineon IRFHM8228TRPBF에 대한 설명입니다.
Single N-Channel 25 V 5.2 mOhm 18 nC HEXFET® Power Mosfet - PQFN 3.3 x 3.3 mm
Control or synchronous MOSFET for synchronous buck converter | MOSFET N-CH 25V 19A 8PQFN
25V Single N-Channel HEXFET Power MOSFET in a 3.3mm X 3.3mm PQFN package, PQFN 3.3X3.3 8L, RoHS
Infineon SCT
TAPE AND REEL / MOSFET, 25V,A, 5mOhm, 12nC, PQFN3.3x3.3 single
Trans MOSFET N-CH 25V 19A 8-Pin QFN EP T/R
HEXFET POWER MOSFET Power Field-Effect Transistor, 19A I(D), 25V, 0.0052ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Benefits: RoHS Compliant; Low Thermal Resistance to PCB (less than 3.4C/W); Low Profile (less than 1.0 mm); Industry-Standard Pinout; Compatible with Existing Surface Mount Techniques; Qualified Industrial; Qualified MSL1 | Target Applications: Battery Protection; Isolated Primary Side MOSFETs; Isolated Secondary Side SyncRec MOSFETs; Load Switch High Side; Load Switch Low Side; MultiPhase ControlFET; Point of Load ControlFET
제조업체 별칭
Infineon에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. Infineon는 다음 이름으로도 알려져 있습니다:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
기술 사양
Physical
MountSurface Mount
Number of Pins8
Number of Terminals8
Technical
Continuous Drain Current (ID)19 A
Drain to Source Breakdown Voltage25 V
Drain to Source Resistance5.2 mΩ
Drain to Source Voltage (Vdss)25 V
Fall Time6.2 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance1.667 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation34 W
Min Breakdown Voltage25 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
On-State Resistance5.2 mΩ
Package Quantity4000
PackagingTape & Reel
Power Dissipation2.8 W
Rds On Max5.2 mΩ
Resistance4.2 mΩ
Rise Time22 ns
Threshold Voltage1.8 V
Turn-Off Delay Time13 ns
Turn-On Delay Time11 ns
Dimensions
Height800 µm
규정 준수
환경 분류
China RoHSCompliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
규정 준수 정책