공급망
Country of OriginMalaysia
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2009-12-29
Lifecycle StatusObsolete (Last Updated: 3 days ago)
LTB Date2021-08-01
LTD Date2022-02-01
Manufacturer Lifecycle StatusOBSOLETE (Last Updated: 3 days ago)
관련 부품
InfineonIRF8252PBF
2.5W(Ta) 20V 2.35V@ 100¦ÌA 53nC@ 4.5 V 1N 25V 2.7m¦¸@ 25A,10V 25A 5.305nF@13V SOIC-8
설명
유통업체에서 제공한 onsemi FDMS7558S에 대한 설명입니다.
Trans MOSFET N-CH 25V 32A 8-Pin Power 56 T/R
Power Field-Effect Transistor, 32A I(D), 25V, 0.00125ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240AA
MOSFET, N CH, 25V, 49A, POWER56; Transistor Polarity:N Channel; Continuous Drain Current Id:49A; Drain Source Voltage Vds:25V; On Resistance Rds(on):0.001ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.6V; Power Dissipation Pd:89W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:Power 56; No. of Pins:8; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012)
The FDMS7558S has been designed to minimize losses in power conversion application. Advancements in both silicon and package technologies have been combined to offer the lowest rSyncFET Schottky Body Diode DS(on) while maintaining excellent switching performance. This device has the added benefit of an efficient monolithic Schottky body diode.
제조업체 별칭
onsemi에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. onsemi는 다음 이름으로도 알려져 있습니다:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
기술 사양
Physical
MountSurface Mount
Number of Pins8
Number of Terminals5
Weight90 mg
Technical
Continuous Drain Current (ID)32 A
Drain to Source Breakdown Voltage25 V
Drain to Source Resistance1.25 mΩ
Drain to Source Voltage (Vdss)25 V
Element ConfigurationSingle
Fall Time5 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance7.77 nF
Max Operating Temperature150 °C
Max Power Dissipation89 W
Min Breakdown Voltage25 V
Min Operating Temperature-55 °C
Nominal Vgs1.6 V
Number of Elements1
Power Dissipation2.5 W
Rds On Max1.25 mΩ
Rise Time9 ns
Threshold Voltage1.6 V
Turn-Off Delay Time44 ns
Turn-On Delay Time18 ns
Dimensions
Height1.05 mm
Length5 mm
Width6 mm