대체 부품
Price @ 1000
$ 1.17
$ 0.418
$ 0.418
Stock
656,866
3,320,476
3,320,476
Authorized Distributors
5
6
6
Mount
Surface Mount
Surface Mount
Surface Mount
Case/Package
D2PAK
DPAK
DPAK
Drain to Source Voltage (Vdss)
100 V
100 V
100 V
Continuous Drain Current (ID)
17 A
17 A
17 A
Threshold Voltage
-
2 V
2 V
Rds On Max
105 mΩ
105 mΩ
105 mΩ
Gate to Source Voltage (Vgs)
16 V
16 V
16 V
Power Dissipation
79 W
52 W
52 W
Input Capacitance
800 pF
800 pF
800 pF
공급망
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2010-04-12
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2023-08-31
LTD Date2024-02-29
관련 부품
InfineonIRLR3410TRPBF
Power MOSFET, N Channel, 100 V, 17 A, 105 Milliohms, TO-252AA (DPAK), 3 Pins, Surface Mount
InfineonIRLR3410PBF
MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 0.105Ohm;ID 17A;D-Pak (TO-252AA);PD 79W
InfineonIRLR3410TRLPBF
MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 0.105Ohm;ID 17A;D-Pak (TO-252AA);PD 79W
onsemiHUF76619D3S
18A, 100V, 0.087 Ohm, N-Channel, Logic Level UltraFET Power MOSFET | MOSFET N-CH 100V 18A DPAK
설명
유통업체에서 제공한 Infineon AUIRLR3410TRL에 대한 설명입니다.
Single N-Channel 100 V 105 mOhm 34 nC Automotive HEXFET® Power Mosfet - DPAK
Trans MOSFET N-CH Si 100V 17A Automotive AEC-Q101 3-Pin(2+Tab) DPAK T/R
Power Field-Effect Transistor, 17A I(D), 100V, 0.125ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
Mosfet, Aec-Q101, N-Ch, 100V, To-252Aa; Transistor Polarity:N Channel; Continuous Drain Current Id:17A; Drain Source Voltage Vds:100V; On Resistance Rds(On):0.105Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:2V; Power Rohs Compliant: Yes |Infineon AUIRLR3410TRL
제조업체 별칭
Infineon에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. Infineon는 다음 이름으로도 알려져 있습니다:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
기술 사양
Physical
Case/PackageD2PAK
Contact PlatingTin
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)17 A
Drain to Source Breakdown Voltage100 V
Drain to Source Resistance125 mΩ
Drain to Source Voltage (Vdss)100 V
Fall Time26 ns
Gate to Source Voltage (Vgs)16 V
Input Capacitance800 pF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation79 W
Min Breakdown Voltage100 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Power Dissipation79 W
Rds On Max105 mΩ
Rise Time53 ns
Schedule B8541290080
Turn-Off Delay Time30 ns
Turn-On Delay Time7.2 ns
Dimensions
Height2.52 mm
Length6.7056 mm
Width6.22 mm