Infineon IRLR3410TRLPBF

MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 0.105Ohm;ID 17A;D-Pak (TO-252AA);PD 79W

Single N-Channel 100 V 105 mOhm 34 nC HEXFET® Power Mosfet - DPAK

100V Single N-Channel HEXFET Power MOSFET in a D-Pak package, DPAK-3, RoHS

Power Field-Effect Transistor, 17A I(D), 100V, 0.125ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

MOSFET, N-CH, 100V, 17A, TO-252AA; Transistor Polarity:N Channel; Continuous Drain Current Id:17A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.105ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2V; Po

MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Continuous Drain Current, Id:15A; On Resistance, Rds(on):155mohm; Rds(on) Test Voltage, Vgs:16V; Package/Case:D-Pak; Power Dissipation, Pd:79W ;RoHS Compliant: Yes

The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.The devices are available in a variety of surface mount and through-hole packages with industry standard footprints for ease of design.

Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 17 / Drain-Source Voltage (Vds) V = 100 / ON Resistance (Rds(on)) mOhm = 105 / Gate-Source Voltage V = 16 / Fall Time ns = 26 / Rise Time ns = 53 / Turn-OFF Delay Time ns = 30 / Turn-ON Delay Time ns = 7.2 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 175 / Package Type = TO-252 / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Reflow Temperature Max. °C = 300 / Power Dissipation (Pd) W = 79