대체 부품
Price @ 1000
$ 0.88
$ 0.433
$ 0.433
Stock
376,673
413,858
413,858
Authorized Distributors
1
3
3
Mount
Surface Mount
Surface Mount
Surface Mount
Case/Package
DPAK
DPAK
DPAK
Drain to Source Voltage (Vdss)
30 V
30 V
30 V
Continuous Drain Current (ID)
20 A
20 A
20 A
Threshold Voltage
-
-
-
Rds On Max
45 mΩ
45 mΩ
45 mΩ
Gate to Source Voltage (Vgs)
16 V
16 V
16 V
Power Dissipation
45 W
38 W
38 W
Input Capacitance
450 pF
450 pF
450 pF
공급망
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2011-01-11
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2023-03-31
LTD Date2023-09-30
관련 부품
STMicroelectronicsSTD17NF03LT4
N-channel 30 V, 0.038 Ohm, 17 A STripFET(TM) II Power MOSFET in DPAK package
STMicroelectronicsSTD18NF03L
N-channel 30 V, 0.038 Ohm typ., 17A STripFET(TM) II Power MOSFET in a DPAK package
STMicroelectronicsSTD35NF3LLT4
N-Channel 30V - 0.014Ohm - 35A - DPAK StripFET(TM) II POWER MOSFET
설명
유통업체에서 제공한 Infineon AUIRLR2703TRL에 대한 설명입니다.
MOSFET N-CH 30V 20A DPAK / N-Channel 30 V 20A (Tc) 45W (Tc) Surface Mount D-Pak
Trans MOSFET N-CH Si 30V 23A Automotive AEC-Q101 3-Pin(2+Tab) DPAK T/R
Power Field-Effect Transistor, 20A I(D), 30V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
Transistor Polarity:n Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:23A; On Resistance Rds(On):0.045Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:1V Rohs Compliant: Yes
제조업체 별칭
Infineon에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. Infineon는 다음 이름으로도 알려져 있습니다:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
기술 사양
Physical
Case/PackageDPAK
Contact PlatingTin
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)20 A
Drain to Source Breakdown Voltage30 V
Drain to Source Resistance45 mΩ
Drain to Source Voltage (Vdss)30 V
Element ConfigurationSingle
Fall Time20 ns
Gate to Source Voltage (Vgs)16 V
Input Capacitance450 pF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation45 W
Min Breakdown Voltage30 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
PackagingTape & Reel
Power Dissipation45 W
Rds On Max45 mΩ
Rise Time140 ns
Turn-Off Delay Time12 ns
Turn-On Delay Time8.5 ns
Dimensions
Height2.52 mm