가격 및 재고
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| DigiKey | 497-2475-1-ND | 785 | 1 | Cut Tape | ||||||||
| Farnell | STD35NF3LLT4 | 0 | 1 | Cut Tape | 1d | |||||||
| element14 APAC | STD35NF3LLT4 | 0 | 1 | Cut Tape | 18h | |||||||
| Microchip USA | STD35NF3LLT4 | 2,985 | 3K | 21h | ||||||||
| Component Stockers USA | STD35NF3LLT4 | 5,086 | 19h |
공급망
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1980-01-06
Lifecycle StatusObsolete (Last Updated: 1 month ago)
LTB Date2014-01-29
관련 부품
InfineonAUIRLR2703TRL
MOSFET N-CH 30V 20A DPAK / N-Channel 30 V 20A (Tc) 45W (Tc) Surface Mount D-Pak
STMicroelectronicsSTD40NF03LT4
N-CHANNEL 30V - 0.0090 OHM - 40A DPAK LOW GATE CHARGE STripFET MOSFET
STMicroelectronicsSTD17NF03LT4
N-channel 30 V, 0.038 Ohm, 17 A STripFET(TM) II Power MOSFET in DPAK package
설명
유통업체에서 제공한 STMicroelectronics STD35NF3LLT4에 대한 설명입니다.
N-Channel 30V - 0.014Ohm - 35A - DPAK StripFET(TM) II POWER MOSFET
30 V-35 A-0.014 OHM-DPAK N-CHANNEL STRIPFET II POWER MOSFET Power Field-Effect Transistor, 35A I(D), 30V, 0.0215ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
Transistor; Transistor Type:MOSFET; Continuous Drain Current, Id:35A; Drain Source Voltage, Vds:30V; On Resistance, Rds(on):0.0195ohm; Rds(on) Test Voltage, Vgs:16V; Threshold Voltage, Vgs Typ:2.5V; Power Dissipation, Pd:50W ;RoHS Compliant: Yes
제조업체 별칭
STMicroelectronics에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. STMicroelectronics는 다음 이름으로도 알려져 있습니다:
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
기술 사양
Physical
Case/PackageDPAK
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)35 A
Current Rating35 A
Drain to Source Breakdown Voltage30 V
Drain to Source Resistance21.5 mΩ
Drain to Source Voltage (Vdss)30 V
Dual Supply Voltage30 V
Element ConfigurationSingle
Fall Time21 ns
Gate to Source Voltage (Vgs)16 V
Input Capacitance800 pF
Max Operating Temperature175 °C
Max Power Dissipation50 W
Min Breakdown Voltage30 V
Min Operating Temperature-55 °C
Nominal Vgs2.5 V
Number of Elements1
PackagingCut Tape
Power Dissipation50 W
Rds On Max19.5 mΩ
Resistance19.5 mΩ
Rise Time100 ns
Threshold Voltage2.5 V
Turn-Off Delay Time20 ns
Turn-On Delay Time17 ns
Voltage Rating (DC)30 V
Dimensions
Width6.8 mm