가격 및 재고
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| RS (Formerly Allied Electronics) | AUIRFS4410Z | 0 | 3K | Bulk | 2h | |||||||
| Microchip USA | AUIRFS4410Z | 196 | 150 | Bulk | 5h | |||||||
| Win Source | WS-AUIRFS4410Z | 1,330 | 4 | 12h | ||||||||
| Worldway Electronics | AUIRFS4410Z | 8,526 | 7 | Tube | 11h | |||||||
| SHENGYU ELECTRONICS | AUIRFS4410Z | 17,449 | 1 | 1d |
대체 부품
Price @ 1000
$ 0.952
$ 0.952
Stock
67,926
1,136,942
1,136,942
Authorized Distributors
1
6
6
Mount
Surface Mount
Surface Mount
Surface Mount
Case/Package
D2PAK
D2PAK
D2PAK
Drain to Source Voltage (Vdss)
100 V
100 V
100 V
Continuous Drain Current (ID)
97 A
97 A
97 A
Threshold Voltage
2 V
-
-
Rds On Max
9 mΩ
9 mΩ
9 mΩ
Gate to Source Voltage (Vgs)
20 V
20 V
20 V
Power Dissipation
230 W
230 W
230 W
Input Capacitance
4.82 nF
4.82 nF
4.82 nF
관련 부품
InfineonIRFS4410ZTRLPBF
Power MOSFET, N Channel, 100 V, 97 A, 0.0072 ohm, TO-263 (D2PAK), Surface Mount
InfineonAUIRFS4610
Automotive Q101 100V Single N-Channel HEXFET Power MOSFET in a D2-Pak Package
STMicroelectronicsSTH110N10F7-2
N-channel 100 V, 4.9 mOhm typ., 110 A STripFET F7 Power MOSFET in H2PAK-2 package
STMicroelectronicsSTB100N10F7
N-channel 100 V, 0.0068 Ohm typ., 80 A STripFET F7 Power MOSFET in D2PAK package
설명
유통업체에서 제공한 Infineon AUIRFS4410Z에 대한 설명입니다.
MOSFET, N-CH, 100V, 97A, D2PAK; Transistor Polarity:N Channel; Continuous Drain
Trans MOSFET N-CH 100V 97A Automotive 3-Pin(2+Tab) D2PAK Tube
Automotive Q101 100V Single N-Channel HEXFET Power MOSFET in a D2-Pak Package
Power Field-Effect Transistor, 97A I(D), 100V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.
MOSFET, N-CH, 100V, 97A, D2PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:97A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.0072ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:230W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-263AB; No. of Pins:3; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012)
제조업체 별칭
Infineon에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. Infineon는 다음 이름으로도 알려져 있습니다:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
기술 사양
Physical
Case/PackageD2PAK
Contact PlatingTin
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)97 A
Drain to Source Breakdown Voltage100 V
Drain to Source Resistance9 mΩ
Drain to Source Voltage (Vdss)100 V
Fall Time57 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance4.82 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation230 W
Min Breakdown Voltage100 V
Min Operating Temperature-55 °C
Nominal Vgs2 V
Number of Channels1
Number of Elements1
Package Quantity1000
Power Dissipation230 W
Rds On Max9 mΩ
Rise Time52 ns
Schedule B8541290080
Threshold Voltage2 V
Turn-Off Delay Time43 ns
Turn-On Delay Time16 ns
Dimensions
Height5.084 mm
Length10.67 mm
Width9.65 mm