가격 및 재고
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Microchip USA | STH110N10F7-2 | 150 | 3K | Tray | 7d | |||||||
| Win Source | WS-STH110N10F7-2 | 9,000 | 26 | 2h | ||||||||
| Worldway Electronics | STH110N10F7-2 | 18,914 | 7 | Tape & Reel | 1h | |||||||
| Aztech | STH110N10F7-2 | 7,260 | 21h | |||||||||
| RC Electronics | STH110N10F7-2 | 44,483 | 1 | 18m |
관련 부품
InfineonIPB065N10N3GATMA1
MOSFET N-CH 100V 80A D2PAK / N-Channel 100 V 80A (Tc) 150W (Tc) Surface Mount PG-TO263-3
InfineonIRFS3307ZTRRPBF
MOSFET N-CH 75V 120A D2PAK / Trans MOSFET N-CH Si 75V 120A 3-Pin(2+Tab) D2PAK T/R
STMicroelectronicsSTB100N10F7
N-channel 100 V, 0.0068 Ohm typ., 80 A STripFET F7 Power MOSFET in D2PAK package
VishaySUM70060E-GE3
Power MOSFET, N Channel, 100 V, 131 A, 0.0056 ohm, TO-263 (D2PAK), Surface Mount
설명
유통업체에서 제공한 STMicroelectronics STH110N10F7-2에 대한 설명입니다.
N-channel 100 V, 4.9 mOhm typ., 110 A STripFET F7 Power MOSFET in H2PAK-2 package
STH110N10F7-2 N-channel MOSFET Transistor, 110 A, 100 V, 3-Pin H2PAK
Power Field-Effect Transistor, 110A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
Trans MOSFET N-CH 100V 110A 3-Pin(2+Tab) H2PAK T/R
150W(Tc) 20V 4.5V@ 250¦ÌA 72nC@ 10 V 1N 100V 6.5m¦¸@ 55A,10V 110A 5.117nF@50V H2PAK-2
MOSFET N CH 100V 110A H2PAK / High avalanche ruggedness
16/32-Bits Micros |Stmicroelectronics STH110N10F7-2
Power MOSFETs, 100V, 110A, H2PAK-2, Tape and Reel
STMicroelectronics SCT
제조업체 별칭
STMicroelectronics에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. STMicroelectronics는 다음 이름으로도 알려져 있습니다:
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
기술 사양
Physical
Case/PackageTO-263-3
MountSurface Mount
Number of Pins3
Technical
Continuous Drain Current (ID)110 A
Drain to Source Breakdown Voltage100 V
Drain to Source Resistance6.5 mΩ
Drain to Source Voltage (Vdss)100 V
Element ConfigurationSingle
Gate to Source Voltage (Vgs)20 V
Input Capacitance5.117 nF
Max Operating Temperature175 °C
Max Power Dissipation150 W
Min Operating Temperature-55 °C
Number of Elements1
PackagingTape and Reel
Power Dissipation150 W
Rds On Max6.5 mΩ
Turn-Off Delay Time52 ns
Turn-On Delay Time25 ns
Dimensions
Height4.8 mm
Length15.8 mm
Width10.4 mm