공급망
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2011-08-15
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2023-03-31
LTD Date2023-09-30
관련 부품
InfineonIRFS3107TRL7PP
N CH POWER MOSFET. HEXFET, 75V, 260A, D2PAK; Transistor Polarity:N Channel; Cont
STMicroelectronicsSTH240N75F3-6
N-channel 75 V, 2.6 mOhm typ., 180 A STripFET(TM) III Power MOSFET in H2PAK-6 package
STMicroelectronicsSTH250N55F3-6
N-channel 55 V, 2.2 mOhm, 180 A, H2PAK, STripFET III Power MOSFET
설명
유통업체에서 제공한 Infineon AUIRFS3107-7P에 대한 설명입니다.
Automotive Q101 75V Single N-Channel HEXFET Power MOSFET in a D2-Pak 7p Package
Trans MOSFET N-CH 75V 260A Automotive 7-Pin(6+Tab) D2PAK Tube
Transistor MOSFET N-ch 75V 190A D2PAK-7
TUBE / Automotive MOSFET 75V, 260A, 2.6 mOhm, 160 nC Qg, D2Pak-7P
Power Field-Effect Transistor, 240A I(D), 75V, 0.0026ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263CB
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- Infineon Technologies
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- INFINEON TECHNOLOGIES (ASIA
기술 사양
Physical
Case/PackageD2PAK
Contact PlatingTin
MountSurface Mount
Number of Pins7
Number of Terminals6
Technical
Continuous Drain Current (ID)240 A
Drain to Source Breakdown Voltage75 V
Drain to Source Resistance2.6 mΩ
Drain to Source Voltage (Vdss)75 V
Element ConfigurationSingle
Fall Time64 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance9.2 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation370 W
Min Breakdown Voltage75 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Power Dissipation370 W
Rds On Max2.6 mΩ
Rise Time80 ns
Turn-Off Delay Time100 ns
Turn-On Delay Time17 ns
Dimensions
Height5.084 mm
Length10.67 mm
Width9.65 mm