가격 및 재고
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Rochester Electronics | AUIRFR120ZTRL | 101,808 | 1d | |||||||||
| Win Source | WS-AUIRFR120ZTRL | 20 | 6 | 1h | ||||||||
| Worldway Electronics | AUIRFR120ZTRL | 14,591 | 7 | Tape & Reel | 23h | |||||||
| Verical | AUIRFR120ZTRL | 99,000 | 597 | |||||||||
| UnikeyIC | AUIRFR120ZTRL | 96,318 | 294 | Cut Tape | 2h |
대체 부품
Price @ 1000
$ 0.464
$ 0.348
$ 0.348
Stock
451,248
533,900
533,900
Authorized Distributors
1
3
3
Mount
Surface Mount
Surface Mount
Surface Mount
Case/Package
TO-252-3
DPAK
DPAK
Drain to Source Voltage (Vdss)
100 V
100 V
100 V
Continuous Drain Current (ID)
8.7 A
8.7 A
8.7 A
Threshold Voltage
-
-
-
Rds On Max
190 mΩ
190 mΩ
190 mΩ
Gate to Source Voltage (Vgs)
20 V
20 V
20 V
Power Dissipation
35 W
35 W
35 W
Input Capacitance
310 pF
310 pF
310 pF
공급망
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2010-12-06
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2018-02-28
LTD Date2018-08-31
관련 부품
onsemiSFT1443-TL-W
Power Field-Effect Transistor, 9A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
설명
유통업체에서 제공한 Infineon AUIRFR120ZTRL에 대한 설명입니다.
Trans MOSFET N-CH 100V 8.7A 3-Pin(2+Tab) DPAK T/R
MOSFET AUTO 100V 1 N-CH HEXFET 190mOhms
MOSFET N-CH 100V 8.7A DPAK
Power Field-Effect Transistor, 8.7A I(D), 100V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
AUTOMOTIVE POWER MOSFET
제조업체 별칭
Infineon에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. Infineon는 다음 이름으로도 알려져 있습니다:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
기술 사양
Physical
Case/PackageTO-252-3
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)8.7 A
Drain to Source Breakdown Voltage100 V
Drain to Source Resistance190 mΩ
Drain to Source Voltage (Vdss)100 V
Element ConfigurationSingle
Fall Time23 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance310 pF
Max Operating Temperature175 °C
Max Power Dissipation35 W
Min Breakdown Voltage100 V
Min Operating Temperature-55 °C
Number of Elements1
PackagingTape & Reel
Power Dissipation35 W
Rds On Max190 mΩ
Rise Time26 ns
Turn-Off Delay Time27 ns
Turn-On Delay Time8.3 ns