가격 및 재고
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| RS (Formerly Allied Electronics) | IRFR120ZPBF | 0 | 1650 | Bulk | 14h | |||||||
| Farnell | IRFR120ZPBF | 0 | 1 | 21h | ||||||||
| Win Source | WS-462201 | 1,999 | 125 | 22h | ||||||||
| Worldway Electronics | IRFR120ZPBF | 15,857 | 7 | Tube | 21h | |||||||
| Lixinc | IRFR120ZPBF | 18,893 | 23h |
공급망
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Lifecycle StatusObsolete (Last Updated: 4 months ago)
관련 부품
InfineonAUIRFR120Z
Automotive Q101 100V Single N-Channel HEXFET Power MOSFET in a D-Pak Package, DPAK-3, RoHS
onsemiSFT1443-TL-W
Power Field-Effect Transistor, 9A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
설명
유통업체에서 제공한 Infineon IRFR120ZPBF에 대한 설명입니다.
Single N-Channel 100 V 190 mOhm 6.9 nC HEXFET® Power Mosfet - TO-252AA
100V Single N-Channel HEXFET Power MOSFET in a D-Pak package, DPAK-3, RoHS
Infineon SCT
Power Field-Effect Transistor, 8.7A I(D), 100V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
Benefits: RoHS Compliant; Industry-leading quality; Fast Switching; 175C Operating Temperature | Target Applications: AC-DC; Lighting LED
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:100V; Continuous Drain Current, Id:8.7A; On Resistance, Rds(on):190mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:D-PAK ;RoHS Compliant: Yes
제조업체 별칭
Infineon에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. Infineon는 다음 이름으로도 알려져 있습니다:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
기술 사양
Physical
Case/PackageDPAK
Contact PlatingTin
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)8.7 A
Current Rating8.7 A
Drain to Source Breakdown Voltage100 V
Drain to Source Resistance190 mΩ
Drain to Source Voltage (Vdss)100 V
Dual Supply Voltage100 V
Element ConfigurationSingle
Fall Time23 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance310 pF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature150 °C
Max Power Dissipation35 W
Min Breakdown Voltage100 V
Min Operating Temperature-55 °C
Nominal Vgs4 V
Number of Elements1
On-State Resistance190 mΩ
Package Quantity3000
Power Dissipation35 W
Rds On Max190 mΩ
Recovery Time36 ns
Resistance190 MΩ
Rise Time26 ns
TerminationSMD/SMT
Threshold Voltage4 V
Turn-Off Delay Time27 ns
Turn-On Delay Time8.3 ns
Voltage Rating (DC)100 V
Dimensions
Height2.3876 mm
Length6.7056 mm
Width6.22 mm