대체 부품
Price @ 1000
$ 2.793
$ 1.17
$ 1.17
Stock
252,858
1,707,747
1,707,747
Authorized Distributors
3
6
6
Mount
Surface Mount
Surface Mount
Surface Mount
Case/Package
D2PAK
D2PAK
D2PAK
Drain to Source Voltage (Vdss)
-55 V
-55 V
-55 V
Continuous Drain Current (ID)
42 A
42 A
42 A
Threshold Voltage
-
4 V
4 V
Rds On Max
20 mΩ
20 mΩ
20 mΩ
Gate to Source Voltage (Vgs)
20 V
20 V
20 V
Power Dissipation
170 W
150 W
150 W
Input Capacitance
3.5 nF
3.5 nF
3.5 nF
공급망
Country of OriginMainland China, Mexico
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2012-08-20
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2023-03-31
LTD Date2023-09-30
관련 부품
InfineonIRF4905SPBF
Transistor: P-MOSFET; unipolar; -70V; -44A; 0.02ohm; 170W; -55+150 deg.C; SMD; TO263 (D2PAK)
설명
유통업체에서 제공한 Infineon AUIRF4905STRL에 대한 설명입니다.
Automotive Q101 -55V Single P-Channel HEXFET Power MOSFET in a D2-Pak Package, D2PAK-3, RoHS
Infineon SCT
TAPE AND REEL / Automotive MOSFET P channel -55V, 20mOhm, 75A, 120nC, D2Pak
Trans MOSFET P-CH Si 55V 70A Automotive AEC-Q101 3-Pin(2+Tab) D2PAK T/R
Power Field-Effect Transistor, 42A I(D), 55V, 0.02ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
MOSFET, AECQ101. P CH, 55V, 42A, TO263AB; Transistor Polarity: P Channel; Continuous Drain Current Id: -42A; Drain Source Voltage Vds: -55V; On Resistance Rds(on): ; Available until stocks are exhausted Alternative available
Benefits: Advanced planar technology; Dynamic dV/dT rating; 175C operating temperature; Fast switching; Fully Avalanche Rated; Repetitive avalanche allowed up to Tjmax; Lead free, RoHS compliant; Automotive qualified
제조업체 별칭
Infineon에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. Infineon는 다음 이름으로도 알려져 있습니다:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
기술 사양
Physical
Case/PackageD2PAK
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)42 A
Drain to Source Breakdown Voltage-55 V
Drain to Source Resistance20 mΩ
Drain to Source Voltage (Vdss)-55 V
Element ConfigurationSingle
Fall Time64 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance3.5 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation170 W
Min Breakdown Voltage55 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
On-State Resistance20 mΩ
Package Quantity800
Power Dissipation170 W
Rds On Max20 mΩ
Rise Time99 ns
Schedule B8541290080
Turn-Off Delay Time51 ns
Turn-On Delay Time20 ns
Dimensions
Height5.084 mm