가격 및 재고
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Rochester Electronics | AUIRF2805STRL | 24,000 | 22h | |||||||||
| RS (Formerly Allied Electronics) | AUIRF2805S | 0 | 3K | Bulk | 15h | |||||||
| Avnet | AUIRF2805S | 0 | 3K | 2d | ||||||||
| Farnell | AUIRF2805S | 0 | 1 | 21h | ||||||||
| Microchip USA | AUIRF2805STRL | 303 | 600 | Bulk | 16h |
대체 부품
Price @ 1000
$ 1.52
$ 2.045
$ 2.045
Stock
97,127
155,112
155,112
Authorized Distributors
4
3
3
Mount
Surface Mount
Surface Mount
Surface Mount
Case/Package
D2PAK
D2PAK
D2PAK
Drain to Source Voltage (Vdss)
55 V
55 V
55 V
Continuous Drain Current (ID)
75 A
75 A
75 A
Threshold Voltage
-
-
-
Rds On Max
4.7 mΩ
4.7 mΩ
4.7 mΩ
Gate to Source Voltage (Vgs)
20 V
20 V
20 V
Power Dissipation
200 W
200 W
200 W
Input Capacitance
5.11 nF
5.11 nF
5.11 nF
공급망
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2011-06-23
Lifecycle StatusObsolete (Last Updated: 4 months ago)
관련 부품
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55V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS
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STB200NF04T4 N-channel MOSFET Transistor, 120 A, 40 V, 3-Pin D2PAK
설명
유통업체에서 제공한 Infineon AUIRF2805S에 대한 설명입니다.
Trans MOSFET N-CH Si 55V 135A Automotive 3-Pin(2+Tab) D2PAK T/R
Automotive Q101 55V Single N-Channel HEXFET Power MOSFET in a D2-Pak Package
Power Field-Effect Transistor, 75A I(D), 55V, 0.0047ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area, D2PAK-3, RoHS
Infineon SCT
Benefits: Advanced Process Technology; Ultra Low On-Resistance; Dynamic dv/dt Rating; 175C Operating Temperature; Fast Switching; Fully Avalanche Rated; Repetitive Avalanche Allowed up to Tjmax; Lead-Free, RoHS Compliant; Automotive Qualified
MOSFET, N CH, 55V, 135A, D2-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:135A; Drain Source Voltage Vds:55V; On Resistance Rds(on):0.0039ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:200W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-263AB; No. of Pins:3; MSL:MSL 1 - Unlimited; SVHC:No SVHC (18-Jun-2012)
제조업체 별칭
Infineon에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. Infineon는 다음 이름으로도 알려져 있습니다:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
기술 사양
Physical
Case/PackageD2PAK
Contact PlatingTin
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)75 A
Drain to Source Breakdown Voltage55 V
Drain to Source Resistance4.7 mΩ
Drain to Source Voltage (Vdss)55 V
Element ConfigurationSingle
Fall Time110 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance5.11 nF
Max Operating Temperature175 °C
Max Power Dissipation200 W
Min Breakdown Voltage55 V
Min Operating Temperature-55 °C
Nominal Vgs2 V
Number of Elements1
Package Quantity800
PackagingTape & Reel (TR)
Power Dissipation200 W
Rds On Max4.7 mΩ
Rise Time120 ns
Turn-Off Delay Time68 ns
Turn-On Delay Time14 ns
Dimensions
Height4.83 mm
Length10.67 mm
Width9.65 mm