가격 및 재고
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Rochester Electronics | AUIRF1404S | 25,431 | 22h | |||||||||
| RS (Formerly Allied Electronics) | AUIRF1404S | 0 | 50 | Bulk | 15h | |||||||
| Farnell | AUIRF1404S | 0 | 1 | 22h | ||||||||
| Mouser | 942-AUIRF1404S | 2,987 | 1 | Tube | ||||||||
| Microchip USA | AUIRF1404S | 386 | 150 | Bulk | 17h |
대체 부품
Price @ 1000
$ 6.28
$ 1.18
$ 1.18
Stock
176,013
344,730
344,730
Authorized Distributors
4
6
6
Mount
Surface Mount
Surface Mount
Surface Mount
Case/Package
D2PAK
D2PAK
D2PAK
Drain to Source Voltage (Vdss)
40 V
40 V
40 V
Continuous Drain Current (ID)
75 A
75 A
75 A
Threshold Voltage
2 V
-
-
Rds On Max
4 mΩ
4 mΩ
4 mΩ
Gate to Source Voltage (Vgs)
20 V
20 V
20 V
Power Dissipation
3.8 W
3.8 W
3.8 W
Input Capacitance
7.36 nF
7.36 nF
7.36 nF
공급망
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2011-06-07
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2022-09-30
LTD Date2023-03-31
관련 부품
VishaySUM90N04-3M3P-E3
Single N-Channel 40 V 0.0033 O 87 nC Surface Mount Power Mosfet - TO-263 (D2PAK)
InfineonIPB80N04S403ATMA1
Trans MOSFET N-CH 40V 80A Automotive 3-Pin(2+Tab) D2PAK T/R / OptiMOS-T2 Power-Transistor
InfineonIPB80N04S4L04ATMA1
40V, N-Ch, 4 mΩ max, Automotive MOSFET, D2PAK, OptiMOS™-T2, PG-TO263-3, RoHS
STMicroelectronicsSTB170NF04
Automotive-grade N-channel 40 V, 4.4 mOhm typ., 80 A STripFET(TM) II Power MOSFET in a D2PAK package
InfineonIPB80N04S404ATMA1
Trans MOSFET N-CH 40V 80A Automotive 3-Pin(2+Tab) D2PAK T/R / OptiMOS-T2 Power-Transistor
설명
유통업체에서 제공한 Infineon AUIRF1404S에 대한 설명입니다.
Automotive Q101 40V Single N-Channel HEXFET Power MOSFET in a D2-Pak Package, D2PAK-3, RoHS
Infineon SCT
Trans MOSFET N-CH 40V 162A 3-Pin(2+Tab) D2PAK Tube
AUTOMOTIVE GRADE HEXFET POWER MOSFET Power Field-Effect Transistor, 75A I(D), 40V, 0.004ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
Benefits: Advanced planar technology; Dynamic dV/dT rating; 175C operating temperature; Fast switching; Fully Avalanche Rated; Repetitive avalanche allowed up to Tjmax; Lead free, RoHS compliant; Automotive qualified
MOSFET, N CH, 40V, 162A, D2-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:75A; Drain Source Voltage Vds:40V; On Resistance Rds(on):0.0035ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:200W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-263AB; No. of Pins:3; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2011)
제조업체 별칭
Infineon에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. Infineon는 다음 이름으로도 알려져 있습니다:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
기술 사양
Physical
Case/PackageD2PAK
Contact PlatingTin
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)75 A
Drain to Source Breakdown Voltage40 V
Drain to Source Resistance4 mΩ
Drain to Source Voltage (Vdss)40 V
Element ConfigurationSingle
Fall Time26 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance7.36 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation200 W
Min Breakdown Voltage40 V
Min Operating Temperature-55 °C
Nominal Vgs2 V
Number of Channels1
Number of Elements1
On-State Resistance4 mΩ
Package Quantity1000
Power Dissipation3.8 W
Rds On Max4 mΩ
Rise Time140 ns
Threshold Voltage2 V
Turn-Off Delay Time72 ns
Turn-On Delay Time17 ns
Dimensions
Height4.83 mm
Length10.67 mm
Width9.65 mm