가격 및 재고
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| DigiKey | 497-12535-1-ND | 382 | 1 | Cut Tape | ||||||||
| Future Electronics | STB170NF04 | 0 | 1K | Tape & Reel | ||||||||
| Avnet | STB170NF04 | 0 | 1K | 2d | ||||||||
| Arrow Electronics | STB170NF04 | 0 | 1K | |||||||||
| Mouser | 511-STB170NF04 | 673 | 1 | Tape & Reel |
공급망
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2009-04-16
Lifecycle StatusProduction (Last Updated: 1 month ago)
관련 부품
InfineonAUIRF1404S
Automotive Q101 40V Single N-Channel HEXFET Power MOSFET in a D2-Pak Package, D2PAK-3, RoHS
InfineonIPB80N04S404ATMA1
Trans MOSFET N-CH 40V 80A Automotive 3-Pin(2+Tab) D2PAK T/R / OptiMOS-T2 Power-Transistor
InfineonIPB80N04S4L04ATMA1
40V, N-Ch, 4 mΩ max, Automotive MOSFET, D2PAK, OptiMOS™-T2, PG-TO263-3, RoHS
설명
유통업체에서 제공한 STMicroelectronics STB170NF04에 대한 설명입니다.
Automotive-grade N-channel 40 V, 4.4 mOhm typ., 80 A STripFET(TM) II Power MOSFET in a D2PAK package
Trans MOSFET N-CH 40V 80A 3-Pin(2+Tab) D2PAK T/R
40 V, 80 A, 4.4 MILLI OHM, D2PAK STRIPFET II N-CHANNEL POWER MOSFET Power Field-Effect Transistor, 80A I(D), 40V, 0.005ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
제조업체 별칭
STMicroelectronics에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. STMicroelectronics는 다음 이름으로도 알려져 있습니다:
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
기술 사양
Physical
Case/PackageTO-263-3
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)80 A
Drain to Source Breakdown Voltage40 V
Drain to Source Resistance5 mΩ
Drain to Source Voltage (Vdss)40 V
Element ConfigurationSingle
Fall Time66 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance9 nF
Max Operating Temperature175 °C
Max Power Dissipation300 W
Min Breakdown Voltage40 V
Min Operating Temperature-55 °C
Number of Elements1
PackagingTape and Reel
Power Dissipation300 W
Rds On Max5 mΩ
Rise Time57 ns
Turn-Off Delay Time100 ns
Turn-On Delay Time26 ns