대체 부품
Price @ 1000
$ 19.505
$ 19.505
Stock
16,782
13,168
13,168
Authorized Distributors
0
2
2
Mount
Through Hole
Through Hole
Through Hole
Case/Package
TO-39
TO-39
TO-39
Drain to Source Voltage (Vdss)
400 V
400 V
400 V
Continuous Drain Current (ID)
3 A
3 A
3 A
Threshold Voltage
-
-
-
Rds On Max
-
-
-
Gate to Source Voltage (Vgs)
20 V
20 V
20 V
Power Dissipation
25 W
25 W
25 W
Input Capacitance
-
-
-
공급망
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1990-01-01
Lifecycle StatusProduction (Last Updated: 4 months ago)
설명
유통업체에서 제공한 Infineon 2N6800에 대한 설명입니다.
Benefits: Hermetically packaged power MOSFET; Packaged on a MIL-PRF-19500 manufacturing line
400V Single N-Channel Hi-Rel MOSFET in a TO-205AF package, TO-205AF-3
Infineon SCT
N Channel Mosfet, 400V, 3A To-205Af
Trans MOSFET N-CH 400V 14A 3-Pin TO-39
Power Field-Effect Transistor, 3A I(D), 400V, 1.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF
제조업체 별칭
Infineon에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. Infineon는 다음 이름으로도 알려져 있습니다:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
기술 사양
Physical
Body MaterialMetal
Case/PackageTO-39
Contact PlatingLead, Tin
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)3 A
Drain to Source Breakdown Voltage400 V
Drain to Source Resistance1.1 Ω
Drain to Source Voltage (Vdss)400 V
Gate to Source Voltage (Vgs)20 V
Max Operating Temperature150 °C
Max Power Dissipation25 W
Min Breakdown Voltage400 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation25 W