공급망
Export Control Classification Number (ECCN) CodeEAR99
Lifecycle StatusProduction (Last Updated: 1 month ago)
관련 부품
onsemiFQD2N60CTF
Power Field-Effect Transistor, 1.9A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
설명
유통업체에서 제공한 Vishay IRFRC20PBF에 대한 설명입니다.
Single N-Channel 600 V 4.4 Ohms Surface Mount Power Mosfet - TO-252
Power Field-Effect Transistor, 2A I(D), 600V, 4.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
Transistor Polarity:n Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:2A; On Resistance Rds(On):4.4Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; No. Of Pins:3Pins Rohs Compliant: No
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 2 / Drain-Source Voltage (Vds) V = 600 / ON Resistance (Rds(on)) Ohm = 4.4 / Gate-Source Voltage V = 20 / Fall Time ns = 25 / Rise Time ns = 23 / Turn-OFF Delay Time ns = 30 / Turn-ON Delay Time ns = 10 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = TO-252 / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Power Dissipation (Pd) W = 42
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기술 사양
Physical
Case/PackageDPAK
Contact PlatingTin
MountSurface Mount
Number of Pins3
Number of Terminals2
Weight1.437803 g
Technical
Continuous Drain Current (ID)2 A
Drain to Source Breakdown Voltage600 V
Drain to Source Resistance4.4 Ω
Drain to Source Voltage (Vdss)600 V
Element ConfigurationSingle
Fall Time25 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance350 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation42 W
Min Breakdown Voltage600 V
Min Operating Temperature-55 °C
Nominal Vgs4 V
Number of Channels1
Number of Elements1
Power Dissipation2.5 W
Rds On Max4.4 Ω
Recovery Time580 ns
Resistance4.4 Ω
Rise Time23 ns
Schedule B8541290080
Threshold Voltage4 V
Turn-Off Delay Time30 ns
Turn-On Delay Time10 ns
Dimensions
Height2.52 mm
Length6.73 mm
Width6.22 mm