가격 및 재고
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Newark | STD2LN60K3 | 12,080 | 1 | Cut Tape | ||||||||
| Arrow Electronics | STD2LN60K3 | 2,500 | 2500 | |||||||||
| Verical | STD2LN60K3 | 2,500 | 2500 | |||||||||
| TME | STD2LN60K3 | 470 | 1 | 1d | ||||||||
| DigiKey | 497-13390-1-ND | 484 | 1 | Cut Tape |
공급망
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2012-07-27
Lifecycle StatusProduction (Last Updated: 4 months ago)
관련 부품
STMicroelectronicsSTD2HNK60Z
N-channel 600 V - 4.4 Ω - 2 A - TO-92/TO-220FP/DPAK/IPAK Zener-protected SuperMESH™2; Power MOSFET
onsemiFQD2N60CTF
Power Field-Effect Transistor, 1.9A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
설명
유통업체에서 제공한 STMicroelectronics STD2LN60K3에 대한 설명입니다.
N-channel 600 V, 4 Ohm typ., 2 A, SuperMESH3(TM) Power MOSFET in DPAK package
Power MOSFET, N Channel, 600 V, 2 A, 4 ohm, TO-252 (DPAK), Surface Mount
Trans MOSFET N-CH 600V 2A 3-Pin(2+Tab) DPAK T/R
45W(Tc) 30V 4.5V@ 50¦ÌA 12nC@ 10 V 1N 600V 4.5¦¸@ 1A,10V 2A 235pF@50V DPAK 2.63mm
Hv Mosfet Mdmesh |Stmicroelectronics STD2LN60K3
MOSFET N-Ch 600V 4ohm 2A SuperMESH3 FET
Power Field-Effect Transistor, 2A I(D), 600V, 4.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
场效应管, MOSFET, N沟道, 600V, 2A, TO-252;
Power MOSFETs, 600V, 2A, DPAK, Tape and Reel
STMicroelectronics SCT
제조업체 별칭
STMicroelectronics에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. STMicroelectronics는 다음 이름으로도 알려져 있습니다:
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
기술 사양
Physical
Case/PackageDPAK
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)2 A
Drain to Source Breakdown Voltage600 V
Drain to Source Resistance4.5 Ω
Drain to Source Voltage (Vdss)600 V
Fall Time21 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance235 pF
Max Operating Temperature150 °C
Max Power Dissipation45 W
Min Breakdown Voltage600 V
Min Operating Temperature-55 °C
Number of Elements1
PackagingTape and Reel
Power Dissipation45 W
Rds On Max4.5 Ω
Rise Time8.5 ns
Schedule B8541290080
Turn-Off Delay Time23.5 ns