가격 및 재고
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Newark | ZXMP3A16N8TA | 480 | 1 | Cut Tape | ||||||||
| DigiKey | ZXMP3A16N8CT-ND | 256 | 1 | Cut Tape | ||||||||
| TME | ZXMP3A16N8TA | 0 | 1 | 22h | ||||||||
| Future Electronics | ZXMP3A16N8TA | 0 | 500 | Tape & Reel | ||||||||
| RS (Formerly Allied Electronics) | ZXMP3A16N8TA | 0 | 5 | Bulk | 3h |
공급망
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2002-07-31
Lifecycle StatusProduction (Last Updated: 4 months ago)
관련 부품
InfineonIRF7201TRPBF
MOSFET, Power;N-Ch;VDSS 30V;RDS(ON) 0.03Ohm;ID 7.3A;SO-8;PD 2.5W;VGS +/-20V;-55d
InfineonIRF7201PBF
MOSFET, Power;N-Ch;VDSS 30V;RDS(ON) 0.03Ohm;ID 7.3A;SO-8;PD 2.5W;VGS +/-20V;-55d
설명
유통업체에서 제공한 Diodes Inc. ZXMP3A16N8TA에 대한 설명입니다.
ZXMP3A16 Series 30 V 0.04 Ohm P-Channel Enhancement Mode MOSFET - SOIC-8
Mosfet, P-Ch, 30V, 6.7A, Soic Rohs Compliant: Yes |Diodes Inc. ZXMP3A16N8TA
Trans MOSFET P-CH 30V 6.7A 8-Pin SOIC T/R
1.9W(Ta) 20V 1V@ 250¦ÌA 29.6nC@ 10 V 1P 30V 40m¦¸@ 4.2A,10V 5.6A 1.022nF@15V SOIC-8 5mm*4mm*1.5mm
P-CHANNEL ENHANCEMENT MODE MOSFET, 30V VDS, 20±V VGS
Diodes Inc SCT
场效应管, MOSFET, P沟道, 30V, 6.7A, SOIC;
Small Signal Field-Effect Transistor, 5.6A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
MOSFET P-CHANNEL 30V 6.7A SOIC8
제조업체 별칭
Diodes Inc.에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. Diodes Inc.는 다음 이름으로도 알려져 있습니다:
- Diodes Incorporated
- DIODE
- DII
- DIO
- DIODE INC
- DC COMPONENTS
- DIOD
- YENYO
- Diodes Zetex
- MICRO COM
- MICRO ELECTRONIC INS
- Diodes Inc / Zetex
- DIODE INCORPORATED
- DIODES ZET
- DIODSE
- DINC
- Diodes Inc Inc
- DIOINC
- FORMOSA MS
- DIODES INC(RoHS)
- ZETEX (DIODES INC)
- DIODES INC/VISHAY
- Diodes Incorporation
- ZETEXDIODES
- DIODES INC/VISH
- Pericom
- Diodes Incorporated
기술 사양
Physical
Case/PackageSOIC
MountSurface Mount
Number of Pins8
Number of Terminals8
Weight73.992255 mg
Technical
Continuous Drain Current (ID)5.6 A
Current Rating-6.7 A
Drain to Source Breakdown Voltage-30 V
Drain to Source Resistance40 mΩ
Drain to Source Voltage (Vdss)30 V
Element ConfigurationSingle
Fall Time21.4 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance1.022 nF
Max Operating Temperature150 °C
Max Power Dissipation2.8 W
Min Breakdown Voltage30 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Rds On Max40 mΩ
Resistance40 mΩ
Rise Time6.5 ns
Schedule B8541290080
Turn-Off Delay Time37.1 ns
Turn-On Delay Time3.8 ns
Voltage Rating (DC)-30 V
Dimensions
Height1.5 mm
Length5 mm
Width4 mm