가격 및 재고
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| TME | DMHC4035LSD-13 | 0 | 2500 | 6h | ||||||||
| Newark | DMHC4035LSD-13 | 0 | 1 | Cut Tape | ||||||||
| RS (Formerly Allied Electronics) | DMHC4035LSD-13 | 0 | 100 | Bulk | 6h | |||||||
| Avnet | DMHC4035LSD-13 | 0 | 2500 | 19h | ||||||||
| Future Electronics | DMHC4035LSD-13 | 0 | 2500 | Tape & Reel |
공급망
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2014-01-07
Lifecycle StatusProduction (Last Updated: 4 months ago)
관련 부품
Diodes Inc.ZXMHC3F381N8TC
ZXMHC3 Series 30 V 33 mOhm 2N/2P-Ch. H-Bridge Enhancement Mode MOSFET - SOIC-8
Diodes Inc.ZXMC3A16DN8TC
Dual N & P Channel 30 V 6.4 A 2.1 W Surface Mount Complementary Mosfet - SOIC-8
설명
유통업체에서 제공한 Diodes Inc. DMHC4035LSD-13에 대한 설명입니다.
Mosfet, N/P-Ch, 40V, 4.5A Rohs Compliant: Yes |Diodes Inc. DMHC4035LSD-13
40V COMPLEMENTARY ENHANCEMENT MODE MOSFET H-BRIDGE, 1.5 W, RoHS
Diodes Inc SCT
Trans MOSFET N/P-CH 40V 4.5A/3.7A 8-Pin SO T/R
MOSFETs VDS1=40V ID1=4.5A VDS2=40V ID2=3.7A SOIC8_150MIL
DiodesZetex N/PMOS, Vds=40 V, 2.9 A,4.5 A, SOIC, , 8
MOSFET H-BRIDGE 40V 4.5A/3.7A SOIC8
MOSFET 30V Comp H-Bridge ENH FET 20VGS
H-Bridge MOS 40V 4A 45mOhm SO-8
Power Field-Effect Transistor, 4A I(D), 40V, 0.045ohm, 4-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET
场效应管, MOSFET, N沟道/P沟道, 40V, 4.5A;
제조업체 별칭
Diodes Inc.에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. Diodes Inc.는 다음 이름으로도 알려져 있습니다:
- Diodes Incorporated
- DIODE
- DII
- DIO
- DIODE INC
- DC COMPONENTS
- DIOD
- YENYO
- Diodes Zetex
- MICRO COM
- MICRO ELECTRONIC INS
- Diodes Inc / Zetex
- DIODE INCORPORATED
- DIODES ZET
- DIODSE
- DINC
- Diodes Inc Inc
- DIOINC
- FORMOSA MS
- DIODES INC(RoHS)
- ZETEX (DIODES INC)
- DIODES INC/VISHAY
- Diodes Incorporation
- ZETEXDIODES
- DIODES INC/VISH
- Pericom
- Diodes Incorporated
기술 사양
Physical
Case/PackageSOIC
MountSurface Mount
Number of Pins8
Number of Terminals8
Weight73.992255 mg
Technical
Continuous Drain Current (ID)4 A
Drain to Source Breakdown Voltage40 V
Drain to Source Resistance45 mΩ
Drain to Source Voltage (Vdss)40 V
Fall Time15.3 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance574 pF
Max Operating Temperature150 °C
Max Power Dissipation1.5 W
Min Breakdown Voltage40 V
Min Operating Temperature-55 °C
Number of Channels2
Number of Elements4
Rds On Max45 mΩ
Rise Time2.9 ns
Schedule B8541290080
Turn-Off Delay Time36.3 ns
Turn-On Delay Time3.6 ns
Dimensions
Height1.5 mm
Length4.95 mm
Width3.95 mm