Infineon AUIRF7379Q

Trans MOSFET N/P-CH Si 30V 4.8A/4.3A Automotive 8-Pin SOIC T/R

Automotive Q101 30V Dual N and P-Channel HEXFET Power MOSFET in a SO-8 Package, SO8, RoHS

Power Field-Effect Transistor, 4.8A I(D), 30V, 0.045ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA

MOSFET, NP CH, 30V, 4.8/4.3A, SO8; Transistor Polarity:N and P Channel; Continuous Drain Current Id:4.8A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.045ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:2.5W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (19-Dec-2011); Continuous Drain Current Id, N Channel:5.8A; Continuous Drain Current Id, P Channel:-4.3A; Drain Source Voltage Vds, N Channel:30V; Drain Source Voltage Vds, P Channel:-30V; Module Configuration:Dual; On Resistance Rds(on), N Channel:0.038ohm; On Resistance Rds(on), P Channel:0.070ohm; Power Dissipation Pd:2.5W

Benefits: Advanced planar technology; Dynamic dV/dT rating; 175C operating temperature; Fast switching; Fully Avalanche Rated; Repetitive avalanche allowed up to Tjmax; Lead free, RoHS compliant; Automotive qualified