가격 및 재고
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| DigiKey | DMG4468LK3-13DICT-ND | 1,080 | 1 | Cut Tape | ||||||||
| TME | DMG4468LK3-13 | 0 | 1 | 1d | ||||||||
| Newark | DMG4468LK3-13 | 0 | 1 | Cut Tape | ||||||||
| Avnet | DMG4468LK3-13 | 0 | 2500 | 4h | ||||||||
| Future Electronics | DMG4468LK3-13 | 0 | 2500 | Tape & Reel |
공급망
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2009-10-21
Lifecycle StatusProduction (Last Updated: 4 months ago)
관련 부품
Diodes Inc.DMN3016LK3-13
Mosfet, N-Ch, 30V, 37.8A, To-252 Rohs Compliant: Yes |Diodes Inc. DMN3016LK3-13
Diodes Inc.DMG4800LK3-13
Single N-Channel 30 V 1.71 W 8.7 nC Silicon Surface Mount Mosfet - TO-252-3
InfineonIRFR3707PBF
MOSFET, Power;N-Ch;VDSS 30V;RDS(ON) 9.7 Milliohms;ID 61A;D-Pak (TO-252AA);PD 87W
설명
유통업체에서 제공한 Diodes Inc. DMG4468LK3-13에 대한 설명입니다.
Mosfet, N-Ch, 30V, 9.7A, To-252 Rohs Compliant: Yes |Diodes Inc. DMG4468LK3-13
Trans MOSFET N-CH 30V 9.7A Automotive 3-Pin(2+Tab) DPAK T/R
N-Channel 30 V 16 mO 18.85 nC SMT Enhancement Mode Mosfet - TO-252
Power Field-Effect Transistor, 9.7A I(D), 30V, 0.016ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
제조업체 별칭
Diodes Inc.에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. Diodes Inc.는 다음 이름으로도 알려져 있습니다:
- Diodes Incorporated
- DIODE
- DII
- DIO
- DIODE INC
- DC COMPONENTS
- DIOD
- YENYO
- Diodes Zetex
- MICRO COM
- MICRO ELECTRONIC INS
- Diodes Inc / Zetex
- DIODE INCORPORATED
- DIODES ZET
- DIODSE
- DINC
- Diodes Inc Inc
- DIOINC
- FORMOSA MS
- DIODES INC(RoHS)
- ZETEX (DIODES INC)
- DIODES INC/VISHAY
- Diodes Incorporation
- ZETEXDIODES
- DIODES INC/VISH
- Pericom
- Diodes Incorporated
기술 사양
Physical
Case/PackageTO-252-3
MountSurface Mount
Number of Pins3
Number of Terminals2
Weight3.949996 g
Technical
Continuous Drain Current (ID)9.7 A
Drain to Source Breakdown Voltage30 V
Drain to Source Resistance16 mΩ
Drain to Source Voltage (Vdss)30 V
Fall Time6.01 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance867 pF
Max Operating Temperature150 °C
Max Power Dissipation1.68 W
Min Breakdown Voltage30 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Rds On Max16 mΩ
Rise Time14.53 ns
Turn-Off Delay Time18.84 ns
Turn-On Delay Time5.46 ns