가격 및 재고
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Newark | DMN3016LK3-13 | 2,650 | 1 | Cut Tape | ||||||||
| Arrow Electronics | DMN3016LK3-13 | 2,500 | 2500 | |||||||||
| Verical | DMN3016LK3-13 | 2,500 | 2500 | |||||||||
| DigiKey | DMN3016LK3-13DICT-ND | 13,238 | 1 | Cut Tape | ||||||||
| TME | DMN3016LK3-13 | 0 | 1 | 8h |
관련 부품
Diodes Inc.DMN3024LK3-13
Power MOSFET, N Channel, 30 V, 14.4 A, 0.024 ohm, TO-252 (DPAK), Surface Mount
Diodes Inc.DMG4468LK3-13
Mosfet, N-Ch, 30V, 9.7A, To-252 Rohs Compliant: Yes |Diodes Inc. DMG4468LK3-13
STMicroelectronicsSTD28P3LLH6AG
Automotive-grade P-channel -30 V, 0.027 Ohm typ., -12 A, STripFET H6 Power MOSFET in a DPAK package
설명
유통업체에서 제공한 Diodes Inc. DMN3016LK3-13에 대한 설명입니다.
Mosfet, N-Ch, 30V, 37.8A, To-252 Rohs Compliant: Yes |Diodes Inc. DMN3016LK3-13
N-Channel 30 V 12 mOhm 25.1 nC Enhancement Mode Mosfet - TO-252
Trans MOSFET N-CH 30V 12.4A 3-Pin(2+Tab) DPAK T/R
N-CHANNEL ENHANCEMENT MODE MOSFET, 30V VDS, 20±V VGS
Diodes Inc SCT
DiodesZetex NMOS, Vds=30 V, 38 A, DPAK (TO-252), , 3
Power Field-Effect Transistor, 12.4A I(D), 30V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
MOSFET, N-CH, 30V, 37.8A, TO-252;
제조업체 별칭
Diodes Inc.에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. Diodes Inc.는 다음 이름으로도 알려져 있습니다:
- Diodes Incorporated
- DIODE
- DII
- DIO
- DIODE INC
- DC COMPONENTS
- DIOD
- YENYO
- Diodes Zetex
- MICRO COM
- MICRO ELECTRONIC INS
- Diodes Inc / Zetex
- DIODE INCORPORATED
- DIODES ZET
- DIODSE
- DINC
- Diodes Inc Inc
- DIOINC
- FORMOSA MS
- DIODES INC(RoHS)
- ZETEX (DIODES INC)
- DIODES INC/VISHAY
- Diodes Incorporation
- ZETEXDIODES
- DIODES INC/VISH
- Pericom
- Diodes Incorporated
기술 사양
Physical
Case/PackageTO-252-3
MountSurface Mount
Number of Terminals2
Weight3.949996 g
Technical
Capacitance1.415 nF
Continuous Drain Current (ID)12.4 A
Drain to Source Breakdown Voltage30 V
Drain to Source Resistance12 mΩ
Drain to Source Voltage (Vdss)30 V
Element ConfigurationSingle
Fall Time5.6 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance1.415 nF
Max Operating Temperature150 °C
Max Power Dissipation2.8 W
Min Breakdown Voltage30 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
PackagingTape & Reel (TR)
Rds On Max12 mΩ
Rise Time16.5 ns
Turn-Off Delay Time26.1 ns
Turn-On Delay Time4.8 ns
Dimensions
Height2.29 mm
Length6.1 mm
Width6.58 mm