가격 및 재고
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Avnet | BSS138-7-F | 234,000 | 3K | 1d | ||||||||
| Newark | BSS138-7-F | 363,585 | 1 | Cut Tape | ||||||||
| Future Electronics | BSS138-7-F | 843,000 | 3K | Tape & Reel | ||||||||
| DigiKey | BSS138-FDICT-ND | 671 | 1 | Cut Tape | ||||||||
| Arrow Electronics | BSS138-7-F | 1,122,000 | 3K |
대체 부품
Price @ 1000
$ 0.055
$ 0.079
$ 0.079
Stock
14,904,040
109,325,471
109,325,471
Authorized Distributors
6
6
6
Mount
Surface Mount
-
-
Case/Package
SOT-23
SOT-23-3
SOT-23-3
Drain to Source Voltage (Vdss)
50 V
50 V
50 V
Continuous Drain Current (ID)
200 mA
200 mA
200 mA
Threshold Voltage
1.2 V
1.5 V
1.5 V
Rds On Max
3.5 Ω
3.5 Ω
3.5 Ω
Gate to Source Voltage (Vgs)
20 V
20 V
20 V
Power Dissipation
300 mW
225 mW
225 mW
Input Capacitance
50 pF
50 pF
50 pF
관련 부품
InfineonBSS138NH6327XTSA2
Power MOSFET, N Channel, 60 V, 230 mA, 3.5 Ohm, SOT-23, 3 Pins, Surface Mount
설명
유통업체에서 제공한 Diodes Inc. BSS138-7-F에 대한 설명입니다.
N-Channel 50 V 3.5 Ohm Surface Mount Enhancement Mode Transistor SOT-23-3
Trans MOSFET N-CH 50V 0.2A Automotive 3-Pin SOT-23 T/R
MOSFET Operating temperature: -55...150 °C Housing type: SOT-23 Polarity: N Variants: Enhancement mode Power dissipation: 0.2 W
제조업체 별칭
Diodes Inc.에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. Diodes Inc.는 다음 이름으로도 알려져 있습니다:
- Diodes Incorporated
- DIODE
- DII
- DIO
- DIODE INC
- DC COMPONENTS
- DIOD
- YENYO
- Diodes Zetex
- MICRO COM
- MICRO ELECTRONIC INS
- Diodes Inc / Zetex
- DIODE INCORPORATED
- DIODES ZET
- DIODSE
- DINC
- Diodes Inc Inc
- DIOINC
- FORMOSA MS
- DIODES INC(RoHS)
- ZETEX (DIODES INC)
- DIODES INC/VISHAY
- Diodes Incorporation
- ZETEXDIODES
- DIODES INC/VISH
- Pericom
- Diodes Incorporated
기술 사양
Physical
Case/PackageSOT-23
Contact PlatingTin
MountSurface Mount
Number of Pins3
Number of Terminals3
Weight7.994566 mg
Technical
Continuous Drain Current (ID)200 mA
Current2 A
Current Rating200 mA
Drain to Source Breakdown Voltage50 V
Drain to Source Resistance3.5 Ω
Drain to Source Voltage (Vdss)50 V
Element ConfigurationSingle
Fall Time25 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance50 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation300 mW
Min Breakdown Voltage50 V
Min Operating Temperature-55 °C
Nominal Vgs1.2 V
Number of Channels1
Number of Elements1
PackagingCut Tape
Power Dissipation300 mW
Rds On Max3.5 Ω
Resistance3.5 Ω
Rise Time10 ns
Schedule B8541210080
Threshold Voltage1.2 V
Turn-Off Delay Time20 ns
Turn-On Delay Time20 ns
Voltage50 V
Voltage Rating (DC)50 V
Dimensions
Height1.15 mm
Length2.9 mm
Width1.3 mm