가격 및 재고
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Newark | BSS127SSN-7 | 3,000 | 5 | Cut Tape | ||||||||
| Future Electronics | BSS127SSN-7 | 3,000 | 3K | Tape & Reel | ||||||||
| DigiKey | BSS127SSN-7DICT-ND | 3,037 | 1 | Cut Tape | ||||||||
| TME | BSS127SSN-7 | 0 | 1 | 20h | ||||||||
| Avnet | BSS127SSN-7 | 0 | 3K | 23h |
공급망
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2011-10-03
Lifecycle StatusProduction (Last Updated: 4 months ago)
관련 부품
VishaySI1028X-T1-GE3
VISHAY SI1028X-T1-GE3 Dual MOSFET, Dual N Channel, 480 mA, 30 V, 0.54 ohm, 10 V, 1 V
VishaySI1926DL-T1-E3
Si1926DL Series Dual N Channel 60 V 1.4 Ohm Surface Mount Power Mosfet - SOT-363
설명
유통업체에서 제공한 Diodes Inc. BSS127SSN-7에 대한 설명입니다.
Mosfet, N-Ch, 600V, 0.05A, Sc-59 Rohs Compliant: Yes |Diodes Inc. BSS127SSN-7
Single N-Channel 600 V 190 Ohm 1.08 nC 1.25 W Mosfet - SOT-23
Power MOSFET, N Channel, 600 V, 50 mA, 80 ohm, SC-59, Surface Mount
Trans MOSFET N-CH 600V 0.07A Automotive 3-Pin SC-59 T/R
N-CHANNEL ENHANCEMENT MODE FIELD MOSFET, 600V VDS, 20±V VGS,
Diodes Inc SCT
N-Channel Enhancement Mode MOSFET SC-59
RS APAC
Small Signal Field-Effect Transistor, 0.045A I(D), 600V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
MOSFET BSS Family,SC59 Family,SC59,3K
DiodesZetex NMOS, Vds=600 V, 70 mA, SOT-346, , 3
MOSFET, N-CH, 600V, 0.05A, SC-59;
제조업체 별칭
Diodes Inc.에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. Diodes Inc.는 다음 이름으로도 알려져 있습니다:
- Diodes Incorporated
- DIODE
- DII
- DIO
- DIODE INC
- DC COMPONENTS
- DIOD
- YENYO
- Diodes Zetex
- MICRO COM
- MICRO ELECTRONIC INS
- Diodes Inc / Zetex
- DIODE INCORPORATED
- DIODES ZET
- DIODSE
- DINC
- Diodes Inc Inc
- DIOINC
- FORMOSA MS
- DIODES INC(RoHS)
- ZETEX (DIODES INC)
- DIODES INC/VISHAY
- Diodes Incorporation
- ZETEXDIODES
- DIODES INC/VISH
- Pericom
- Diodes Incorporated
기술 사양
Physical
Case/PackageSC
Contact PlatingTin
MountSurface Mount
Number of Pins3
Number of Terminals3
Weight7.994566 mg
Technical
Continuous Drain Current (ID)45 mA
Drain to Source Breakdown Voltage600 V
Drain to Source Resistance190 mΩ
Drain to Source Voltage (Vdss)600 V
Element ConfigurationSingle
Fall Time168 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance21.8 pF
Max Operating Temperature150 °C
Max Power Dissipation1.25 W
Min Breakdown Voltage600 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
PackagingTape & Reel
Power Dissipation1.25 W
Rds On Max160 Ω
Rise Time7.2 ns
Schedule B8541290080
Turn-Off Delay Time28.7 ns
Turn-On Delay Time5 ns
Dimensions
Height1.3 mm
Length3.1 mm
Width1.7 mm