Infineon IRF520NPBF

Name: Infineon IRF520NPBF
Brand: Infineon
SKU: IRF520NPBF
Price: 0.69 USD
Availability: InStock

Mosfet, Power; N-ch; Vdss 100V; Rds(on) 0.2 Ohm; Id 9.7A; TO-220AB; Pd 48W; Vgs +/-20V

Production

Manufacturer Page Datasheet

가격 및 재고

Distributor		SKU		MOQ	Pkg
Mouser		942-IRF520NPBF	5,023	1	Tube	0.690	0.576	0.468	0.392	0.345	1d
Rochester Electronics		IRF520NPBF	357			0.402	0.402	0.378	0.342	0.342	1d
Avnet	2	IRF520NPBF	728	1		0.391	0.379	0.345	0.322	0.322	1d
RS (Formerly Allied Electronics)		70016960	216	1	Bulk	0.375	0.375	0.375	0.375	0.375	15h
Verical	2	IRF520NPBF	5,863	22				0.386	0.331	0.289	1d

기술 사양

Physical

Case/PackageTO-220AB

Contact PlatingTin

MountThrough Hole

Number of Pins3

Technical

Continuous Drain Current (ID)9.7 A

Current Rating9.7 A

Drain to Source Breakdown Voltage100 V

Drain to Source Resistance200 mΩ

Drain to Source Voltage (Vdss)100 V

Dual Supply Voltage100 V

Element ConfigurationSingle

Fall Time23 ns

Gate to Source Voltage (Vgs)20 V

Input Capacitance330 pF

Max Junction Temperature (Tj)175 °C

Max Operating Temperature175 °C

Max Power Dissipation48 W

Min Operating Temperature-55 °C

Nominal Vgs4 V

Number of Channels1

Number of Elements1

On-State Resistance200 mΩ

Package Quantity1000

PackagingBulk

Power Dissipation48 W

Rds On Max200 mΩ

Recovery Time150 ns

Rise Time23 ns

Schedule B8541290080

Threshold Voltage4 V

Turn-Off Delay Time32 ns

Turn-On Delay Time4.5 ns

Voltage Rating (DC)100 V

Dimensions

Height15.24 mm

Lead Pitch2.54 mm

Length10.5156 mm

Width4.69 mm

Inventory History

3 month trend: -24.64%

CAD Models

Download symbol, footprint, and 3D STEP

Alternate Parts

1 part available

문서

Infineon IRF520NPBF에 대한 데이터시트 및 제조업체 설명서를 다운로드하세요.

Newark

Datasheet9 pages20 years ago

Datasheet9 pages25 years ago

RS (Formerly Allied Electronics)

Datasheet8 pages25 years ago

Datasheet3 pages20 years ago

Datasheet8 pages25 years ago

iiiC

Datasheet9 pages25 years ago

Datasheet9 pages20 years ago

DigiKey

Datasheet8 pages20 years ago

Farnell

Datasheet8 pages23 years ago

재고 내역

3 month trend:

-24.64%

대체 부품

이 부품

대체 부품

InfineonIRF520NPBF

Price @ 1000

$ 0.349

Stock

1,329,963

Authorized Distributors

Mount

Through Hole

Case/Package

TO-220AB

Drain to Source Voltage (Vdss)

100 V

Continuous Drain Current (ID)

9.7 A

Threshold Voltage

4 V

Rds On Max

200 mΩ

Gate to Source Voltage (Vgs)

20 V

Power Dissipation

48 W

Input Capacitance

330 pF

Supply Chain

Lifecycle StatusProduction (Last Updated: 3 years ago)

Engineering Resources

View Evaluation kits and Reference designs for Infineon IRF520NPBF.

설명

유통업체에서 제공한 Infineon IRF520NPBF에 대한 설명입니다.

MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 0.2Ohm;ID 9.7A;TO-220AB;PD 48W;VGS +/-20V

RS (Formerly Allied Electronics)

Infineon Technologies N channel HEXFET power MOSFET, 100 V, 9.7 A, TO-220, IRF520NPBF

Burklin Elektronik

100V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS

Infineon SCT

Trans MOSFET N-CH Si 100V 9.7A 3-Pin(3+Tab) TO-220AB Tube

Chip One Stop

MOSFET, N, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:9.5A; Drain Source Voltage Vds:100V; On Resistance Rds(on):200mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (15-Dec-2010); Current Id Max:9.7A; Current Temperature:25°C; Device Marking:IRF520N; Full Power Rating Temperature:25°C; Lead Spacing:2.54mm; No. of Transistors:1; Package / Case:TO-220AB; Pin Configuration:a; Pin Format:1 g; 2 d/tab; 3 s; Power Dissipation Pd:47W; Power Dissipation Pd:47W; Pulse Current Idm:38A; Termination Type:Through Hole; Voltage Vds Typ:100V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V

element14 APAC

Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature | Target Applications: Consumer Full-Bridge; Full-Bridge; Push-Pull

Infineon