This N-Channel enhancement mode field effect transistors is produced using Fairchild’s proprietary, high cell density, DMOS technology. This product has been designed to minimize on-state resistance while providing rugged, reliable, and fast switching performance.The BSS123 is particularly suited for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers, and other switching applications.
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) mA = 170 / Drain-Source Voltage (Vds) V = 100 / ON Resistance (Rds(on)) Ohm = 10 / Gate-Source Voltage V = 20 / Fall Time ns = 5 / Rise Time ns = 18 / Turn-OFF Delay Time ns = 31 / Turn-ON Delay Time ns = 3.4 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = SOT-23 / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Reflow Temperature Max. °C = 300 / Power Dissipation (Pd) mW = 360
MOSFET, N, SOT-23; Transistor Polarity:N Channel; Continuous Drain Current Id:170mA; Drain Source Voltage Vds:100V; On Resistance Rds(on):6ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.7V; Power Dissipation Pd:360mW; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOT-23; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:170mA; Current Temperature:25°C; Device Marking:BSS123; External Depth:2.5mm; External Length / Height:1.12mm; External Width:3.05mm; Full Power Rating Temperature:25°C; No. of Transistors:1; Package / Case:SOT-23; Power Dissipation Pd:360mW; Power Dissipation Pd:360mW; Pulse Current Idm:680mA; SMD Marking:SA; Tape Width:8mm; Termination Type:SMD; Voltage Vds Typ:100V; Voltage Vgs Max:1.7V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:2V