onsemi BCP56T1G
Production
기술 사양
Physical
Case/PackageSOT-223-4
Contact PlatingTin
Number of Pins4
Technical
Collector Base Voltage (VCBO)100 V
Collector Emitter Breakdown Voltage80 V
Collector Emitter Saturation Voltage500 mV
Collector Emitter Voltage (VCEO)80 V
Current Rating1 A
Element ConfigurationSingle
Emitter Base Voltage (VEBO)5 V
Frequency130 MHz
Gain Bandwidth Product130 MHz
hFE Min25
Max Breakdown Voltage80 V
Max Collector Current1 A
Max Frequency130 MHz
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation1.5 W
Min Operating Temperature-65 °C
Number of Elements1
PackagingCut Tape
PolarityNPN
Power Dissipation1.5 W
Schedule B8541290080
Transition Frequency130 MHz
Voltage Rating (DC)80 V
Dimensions
Height1.57 mm
Length6.5 mm
Width3.5 mm
Inventory History
3 month trend: +110%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
1 part available
문서
onsemi BCP56T1G에 대한 데이터시트 및 제조업체 설명서를 다운로드하세요.
Upverter
onsemi
LCSC
SOS electronic
iiiC
RS (Formerly Allied Electronics)
Farnell
대체 부품
Price @ 1000
$ 0.139
$ 0.118
Stock
3,544,584
4,921,093
Authorized Distributors
11
11
Mount
-
-
Case/Package
SOT-223-4
SOT-223-4
Polarity
NPN
NPN
Collector Emitter Breakdown Voltage
80 V
80 V
Max Collector Current
1 A
1 A
Transition Frequency
130 MHz
130 MHz
Collector Emitter Saturation Voltage
500 mV
500 mV
hFE Min
25
25
Power Dissipation
1.5 W
1.5 W
Supply Chain
Lifecycle StatusProduction (Last Updated: 3 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 3 years ago)
Engineering Resources
View Evaluation kits and Reference designs for onsemi BCP56T1G.
관련 부품
onsemi BCP56-16T3G
ON Semi BCP56-16T3G NPN Bipolar Transistor; 1 A; 80 V SOT-223
onsemi BCP56-16T1G
Single Bipolar Transistor, NPN, 80 V, 1 A, 1.5 W, SOT-223 (TO-261), 4 Pins, Surface Mount
onsemi BCP56T3G
Transistor, Bipolar,Si,NPN,Medium Power,VCEO 80VDC,IC 1A,PD 1.5W,SOT-223,hFE 25
설명
유통업체에서 제공한 onsemi BCP56T1G에 대한 설명입니다.
ON Semi BCP56T1G NPN Bipolar Transistor, 1 A, 80 V SOT-223 | ON Semiconductor BCP56T1G
Single Bipolar Transistor, NPN, 80 V, 1 A, 1.5 W, SOT-223, 4 Pins, Surface Mount
Trans GP BJT NPN 80V 1A 1500mW Automotive 4-Pin(3+Tab) SOT-223 T/R
Transistor NPN BCP56/BCP56T1G ON SEMI RoHS Ampere=1 V=100 SOT223
Halfin
NPN SILICON EPITAXIAL TRANSISTOR Power Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-261AA, Plastic/Epoxy, 4 Pin
NPN Bipolar Transistor hFE 40 to 250
Transistor, NPN, 80V, 1A, SOT-223-3; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:80V; Transition Frequency ft:130MHz; Power
Bipolar Transistor, Npn, 80V, Sot-223, Full Reel; Transistor Polarity:Npn; Collector Emitter Voltage Max:80V; Continuous Collector Current:1A; Power Dissipation:1.5W; Transistor Mounting:Surface Mount; No. Of Pins:3Pins Rohs Compliant: Yes |Onsemi BCP56T1G.
TRANSISTOR, NPN, 80V, 1A, SOT-223-3; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 80V; Transition Frequency ft: 130MHz; Power Dissipation Pd: 1.5W; DC Collector Current: 1A; DC Current Gain hFE: 40hFE; Transistor Case Style: SOT-223; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: AEC-Q101; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018); Operating Temperature Min: -65°C
제조업체 별칭
onsemi에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. onsemi는 다음 이름으로도 알려져 있습니다:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON SEMICONDUCTOR CORP
- ON Semiconductor Corporation
- ON4
- onsemi / Fairchild
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
Inventory History
3 month trend: +110%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
1 part available
기술 사양
Physical
Case/PackageSOT-223-4
Contact PlatingTin
Number of Pins4
Technical
Collector Base Voltage (VCBO)100 V
Collector Emitter Breakdown Voltage80 V
Collector Emitter Saturation Voltage500 mV
Collector Emitter Voltage (VCEO)80 V
Current Rating1 A
Element ConfigurationSingle
Emitter Base Voltage (VEBO)5 V
Frequency130 MHz
Gain Bandwidth Product130 MHz
hFE Min25
Max Breakdown Voltage80 V
Max Collector Current1 A
Max Frequency130 MHz
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation1.5 W
Min Operating Temperature-65 °C
Number of Elements1
PackagingCut Tape
PolarityNPN
Power Dissipation1.5 W
Schedule B8541290080
Transition Frequency130 MHz
Voltage Rating (DC)80 V
Dimensions
Height1.57 mm
Length6.5 mm
Width3.5 mm
문서
onsemi BCP56T1G에 대한 데이터시트 및 제조업체 설명서를 다운로드하세요.
Upverter
onsemi
LCSC
SOS electronic
iiiC
RS (Formerly Allied Electronics)
Farnell