onsemi 2N7002L
Production
기술 사양
Physical
Case/PackageSOT-23
Contact PlatingTin
MountSurface Mount
Number of Pins3
Weight30 mg
Technical
Continuous Drain Current (ID)115 mA
Drain to Source Breakdown Voltage60 V
Drain to Source Resistance7.5 Ω
Drain to Source Voltage (Vdss)60 V
Element ConfigurationSingle
Gate to Source Voltage (Vgs)20 V
Input Capacitance50 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation200 mW
Min Operating Temperature-55 °C
Number of Channels1
PackagingCut Tape (CT)
Rds On Max7.5 Ω
Schedule B8541210080
Threshold Voltage2.5 V
Turn-Off Delay Time15.6 ns
Turn-On Delay Time4.35 ns
Dimensions
Height1.11 mm
Inventory History
3 month trend: -1.82%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
1 part available
대체 부품
Price @ 1000
$ 0.048
$ 0.041
Stock
34,162,095
32,081,116
Authorized Distributors
12
10
Mount
Surface Mount
-
Case/Package
SOT-23
SOT-23-3
Drain to Source Voltage (Vdss)
60 V
60 V
Continuous Drain Current (ID)
115 mA
115 mA
Threshold Voltage
2.5 V
1 V
Rds On Max
7.5 Ω
7.5 Ω
Gate to Source Voltage (Vgs)
20 V
20 V
Power Dissipation
-
225 mW
Input Capacitance
50 pF
50 pF
Supply Chain
Lifecycle StatusProduction (Last Updated: 2 days ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 2 days ago)
Engineering Resources
View Evaluation kits and Reference designs for onsemi 2N7002L.
관련 부품
Diodes Inc.2N7002E-7-F
Trans MOSFET N-CH 60V 0.3A 3-Pin SOT-23 T/R / MOSFET N-CH 60V 0.25A SOT23-3
InfineonBSS84PH6433XTMA1
BSS84P Series 60 V 8 Ohm P-Channel SIPMOS® Small-Signal-Transistor - SOT-23-3
onsemiBSS138L
N-Channel Power MOSFET, Logic Level, 50V, 200mA, 3.5Ω
설명
유통업체에서 제공한 onsemi 2N7002L에 대한 설명입니다.
Single N-Channel 60 V 13.5 Ohm 200 mW Silicon Surface Mount Mosfet - SOT-23
Transistor MOSFET N-CH 60V 0.115A 3-Pin SOT-23 T/R
Avnet Japan
MOSFET, N-CH, 60V, 0.115A, 150DEG C; Transistor Polarity:N Channel; Continuous Drain Current Id:115mA; Source Voltage Vds:60V; On Resistance
Small Signal Field-Effect Transistor, 0.115A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB
MOSFET, N-CH, 60V, 0.115A, 150DEG C; Transistor Polarity: N Channel; Continuous Drain Current Id: 115mA; Drain Source Voltage Vds: 60V; On Resistance Rds(on): 7.5ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2.5V; Power Dissipation Pd: 225mW; Transistor Case Style: SOT-23; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: 2N7002L Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
This N-channel enhancement mode field effect transistor is produced using high cell density, trench MOSFET technology. This product minimizes on-state resistance while providing rugged, reliable and fast switching performance. This product is particularly suited for low-voltage, low-current applications such as small servo motor control, power MOSFET gate drivers, logic level translator, high speed line drivers, power management/power supply, and switching applications.
제조업체 별칭
onsemi에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. onsemi는 다음 이름으로도 알려져 있습니다:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON SEMICONDUCTOR CORP
- ON Semiconductor Corporation
- ON4
- onsemi / Fairchild
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
Inventory History
3 month trend: -1.82%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
1 part available
기술 사양
Physical
Case/PackageSOT-23
Contact PlatingTin
MountSurface Mount
Number of Pins3
Weight30 mg
Technical
Continuous Drain Current (ID)115 mA
Drain to Source Breakdown Voltage60 V
Drain to Source Resistance7.5 Ω
Drain to Source Voltage (Vdss)60 V
Element ConfigurationSingle
Gate to Source Voltage (Vgs)20 V
Input Capacitance50 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation200 mW
Min Operating Temperature-55 °C
Number of Channels1
PackagingCut Tape (CT)
Rds On Max7.5 Ω
Schedule B8541210080
Threshold Voltage2.5 V
Turn-Off Delay Time15.6 ns
Turn-On Delay Time4.35 ns
Dimensions
Height1.11 mm